Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Jiaying Jian"'
Autor:
Enfu Li, Jiaying Jian
Publikováno v:
Micromachines, Vol 15, Iss 5, p 635 (2024)
A top-down design methodology and implementation of a time domain sensor is presented in this paper. The acceleration resolution of the time domain sensor is equal to the time-measurement accuracy divided by the sensor sensitivity. Combined with the
Externí odkaz:
https://doaj.org/article/b6a85f82e80b4a40a671a756b9866cf9
Publikováno v:
Micromachines, Vol 15, Iss 2, p 227 (2024)
This paper characterizes the sensitivity of a time domain MEMS accelerometer. The sensitivity is defined by the increment in the measured time interval per gravitational acceleration. Two sensitivities exist, and they can be enhanced by decreasing th
Externí odkaz:
https://doaj.org/article/f3d655537ced4d2babe9fdf40552a0cb
Publikováno v:
Materials, Vol 12, Iss 2, p 198 (2019)
To meet the need for preparing high-performance nano-optoelectronic devices based on single-layer MoS2, the effects of the heating method (one-step or two-step heating) and the temperature of the MoO3 source on the morphology, size, structure, and la
Externí odkaz:
https://doaj.org/article/0b15de5ca2314d5d88c4428890faf065
Autor:
Jiaying Jian, Pengfan Dong, Zengyun Jian, Ting Zhao, Chen Miao, Honglong Chang, Jian Chen, Yan-Feng Chen, Yan-Bin Chen, Hao Feng, Brice Sorli
Publikováno v:
ACS nano. 16(12)
Low power and high switching ratio are the development direction of the next generation of resistive random access memory (RRAM). Previous techniques could not increase the switching ratio while reducing the SET power. Here, we report a method to fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7de121ce949c11298c4a0742df10e1d7
https://pubmed.ncbi.nlm.nih.gov/36468939
https://pubmed.ncbi.nlm.nih.gov/36468939
Publikováno v:
Measurement. :113077
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0d58e162e8c0f8f15b9f49202c7f4c2
https://doi.org/10.1016/j.measurement.2023.113077
https://doi.org/10.1016/j.measurement.2023.113077
Publikováno v:
RSC Advances. 11:5204-5217
Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS2 was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac423362c0c60cc88ea899ad213dcfc1
https://doi.org/10.1039/d0ra10302k
https://doi.org/10.1039/d0ra10302k
Publikováno v:
Materials Science and Engineering: A. 866:144693
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33778541eb1bd7fccbb4c6f37492fd08
https://doi.org/10.1016/j.msea.2023.144693
https://doi.org/10.1016/j.msea.2023.144693
Publikováno v:
Journal of Alloys and Compounds. 895:162705
Two-dimensional transition metal dichalcogenides (2D TMDCs) are considered as candidate materials for the next generation of nanoscale electronic and optoelectronic devices because of their unique properties. However, the reported photoelectric perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::814af6bdf16de2074cd4a840101aaa82
https://doi.org/10.1016/j.jallcom.2021.162705
https://doi.org/10.1016/j.jallcom.2021.162705
Publikováno v:
Advanced Electronic Materials. 8:2100905
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba47b6d63632261fb05e5c92be2329b3
https://doi.org/10.1002/aelm.202100905
https://doi.org/10.1002/aelm.202100905
Publikováno v:
Materials, Vol 12, Iss 2, p 198 (2019)
Materials
Volume 12
Issue 2
Materials
Volume 12
Issue 2
To meet the need for preparing high-performance nano-optoelectronic devices based on single-layer MoS2, the effects of the heating method (one-step or two-step heating) and the temperature of the MoO3 source on the morphology, size, structure, and la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a51d475b7f80f99f8d2b61d878cff5c3
http://www.mdpi.com/1996-1944/12/2/198
http://www.mdpi.com/1996-1944/12/2/198