Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Jiaw‐Ren Shih"'
Autor:
Chien-Ping Wang, Burn Jeng Lin, Pin-Jiun Wu, Jiaw-Ren Shih, Yue-Der Chih, Jonathan Chang, Chrong Jung Lin, Ya-Chin King
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-7 (2022)
Abstract An on-wafer micro-detector for in situ EUV (wavelength of 13.5 nm) detection featuring FinFET CMOS compatibility, 1 T pixel and battery-less sensing is demonstrated. Moreover, the detection results can be written in the in-pixel storage node
Externí odkaz:
https://doaj.org/article/2d23c787cc12438bb50629a0d69be70e
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021)
Abstract As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between
Externí odkaz:
https://doaj.org/article/3acceb29ffa7492ab61fa86bbe5f21b8
Autor:
Chien-Ping Wang, Burn Jeng Lin, Jiaw-Ren Shih, Yue-Der Chih, Jonathan Chang, Chrong Jung Lin, Ya-Chin King
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-6 (2021)
Abstract A novel in situ imaging solution and detectors array for the focused electron beam (e-beam) are the first time proposed and demonstrated. The proposed in-tool, on-wafer e-beam detectors array features full FinFET CMOS logic compatibility, co
Externí odkaz:
https://doaj.org/article/7009070df9e04b42a9711c01067ee7c6
Autor:
JIAW-REN SHIH, 施教仁
88
In this study, an analytical model of the positive Human Body Model Electro-Static Discharge (ESD) current distribution along the channel width is developed. The current distribution depends on the channel and well doping profiles, and the po
In this study, an analytical model of the positive Human Body Model Electro-Static Discharge (ESD) current distribution along the channel width is developed. The current distribution depends on the channel and well doping profiles, and the po
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/26002859730252115134
Autor:
Ming-Shyue Yeh, Ya-Ching Wang, Yao-Hung Huang, Jiaw-Ren Shih, Yue-Der Chih, Jonathan Chang, Chrong-Jung Lin, Ya-Chin King
Publikováno v:
IEEE Transactions on Electron Devices. 70:2001-2008
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40b6c636c8926cc001e83b72c5aa1a51
https://doi.org/10.1109/ted.2023.3246946
https://doi.org/10.1109/ted.2023.3246946
Publikováno v:
IEEE Transactions on Electron Devices. 69:6971-6976
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bdde945584893676f1a88479695a6bc
https://doi.org/10.1109/ted.2022.3215486
https://doi.org/10.1109/ted.2022.3215486
Autor:
Wei-Hwa Lin, Jiaw-Ren Shih, Jonathan Chang, Yih Wang, Perng-Fei Yuh, Ya-Chin King, Chrong Jung Lin
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7107f73b45d5ec05e3b2333a2259460
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134105
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134105
Autor:
Chrong Jung Lin, Wei-Hwa Lin, Chien-Ping Wang, Burn Jeng Lin, Yue-Der Chih, Jonathan Chang, Ya-Chin King, Jiaw-Ren Shih
Publikováno v:
IEEE Transactions on Electron Devices. 68:4972-4976
An in-tool, on-wafer detectors’ array for monitoring deep ultraviolet (DUV) light is proposed and demonstrated in this work. The proposed electronic layer detectors array (ELDA) features FinFET CMOS compatibility and compact pixel structure. Its mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe22f21fd995614ed94c44ac5c49f83f
https://doi.org/10.1109/ted.2021.3101995
https://doi.org/10.1109/ted.2021.3101995
Autor:
Wei-Hwa Lin, Li Ci Chen, Ming-Han Ho, Hong-Shen Chen, Yu-Lun Hu, Burn Jeng Lin, Pin-Jiun Wu, Jenny Yi-Chun Liu, Yue-Der Chih, Jonathen Chang, Jiaw-Ren Shih, Chrong Jung Lin, Ya-Chin King
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a391f7376bcbd204b3687c89ebca8cf
https://doi.org/10.1109/iedm45625.2022.10019411
https://doi.org/10.1109/iedm45625.2022.10019411
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8996963cc83f982d1a807e54295f37b8
https://doi.org/10.1109/vlsi-tsa54299.2022.9771024
https://doi.org/10.1109/vlsi-tsa54299.2022.9771024