Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Jiating Lu"'
Publikováno v:
Photogrammetric Engineering & Remote Sensing; Mar2024, Vol. 90 Issue 3, p181-188, 8p
Publikováno v:
Journal of Electronic Materials. 51:4073-4078
Autor:
Jiating Lu, Jin Zhang, Zongrong Ying, Xia Li, Yuxuan Wang, Quansheng Fu, Juan Li, Yishan Lu, Xuemei Lin
Publikováno v:
Journal of Electronic Materials. 50:5557-5566
A biomass-derived porous carbon electrode is regarded as a promising electrode material for supercapacitors; however, fabricating a high-performance biomass-derived super-flexible carbon film electrode still remains a great challenge. Herein, a super
Publikováno v:
Computational Materials Science. 216:111845
Publikováno v:
2021 20th International Symposium on Distributed Computing and Applications for Business Engineering and Science (DCABES).
Publikováno v:
Journal of Electronic Materials. 49:290-296
The structure and electronic and magnetic properties of SnSe monolayer doped with transition-metal (TM) atoms (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) were investigated using first-principles calculations. It is found that TM atoms can substitute e
Publikováno v:
The journal of physical chemistry letters. 11(3)
BiOCl has recently elicited intense interest for its excellent photochemical catalysis, energy conversion, and photodetection performance. In this Letter, we systematically investigate BiOCl electronic properties, lattice dynamics, and structural sta
Autor:
Sen Sun, Gang Xiang, Jiating Lu, Jiayin Xu, Huanming Wang, Yong Peng, Xi Zhang, Xiaowei Lv, Yuan Wang
Diluted magnetic semiconductors (DMSs) based on group-IV materials are desirable for spintronic devices compatible with current silicon technology. In this work, amorphous Mn-doped SiGe thin films were first fabricated on Ge substrates by radio frequ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6c8ea71df7ffe30699b0eee10324874
Publikováno v:
Physica B: Condensed Matter. 614:413033
The structural, electronic and optical properties of nitrogen (N)/phosphorus (P) alloyed GeAs and GeAs2 monolayers were investigated by first-principles calculations. Our calculations show that the indirect-to-direct bandgap transition of GeAs and Ge
Publikováno v:
Journal of Raman Spectroscopy. 48:1783-1788