Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jiashu Qian"'
Autor:
Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, Anant K. Agarwal
Publikováno v:
Materials, Vol 17, Iss 7, p 1455 (2024)
The failure mechanism of thermal gate oxide in silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs), whether it is field-driven breakdown or charge-driven breakdown, has always been a controversial topic. Previous
Externí odkaz:
https://doaj.org/article/bcb659463d6f43b7af0bb37f4331bbb1
Autor:
Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, Anant K. Agarwal
Publikováno v:
Micromachines, Vol 15, Iss 2, p 177 (2024)
The body diode degradation in SiC power MOSFETs has been demonstrated to be caused by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift region. To enhance the reliability of the body diode, many process and structural improveme
Externí odkaz:
https://doaj.org/article/a977b346e73443f18f76071e80b00b6f
Publikováno v:
BMC Anesthesiology, Vol 22, Iss 1, Pp 1-9 (2022)
Abstract Persistent postoperative pain causes influence the life quality of many patients. The Epac/PKC pathway has been indicated to regulate mechanical hyperalgesia. The present study used skin/muscle incision and retraction (SMIR) to induce postop
Externí odkaz:
https://doaj.org/article/565ef69d924c4218a390d2ef2bb84faf
Publikováno v:
The Canadian Journal of Chemical Engineering. 101:2317-2329
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42899d2dfb7db257ec273680f36474ca
https://doi.org/10.1002/cjce.24629
https://doi.org/10.1002/cjce.24629
Autor:
Shengnan Zhu, Limeng Shi, Michael Jin, Jiashu Qian, Monikuntala Bhattacharya, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal, Tianshi Liu, Atsushi Shimbori, Chingchi Chen
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::586a9927d2584b89f74456de755f7872
https://doi.org/10.1109/irps48203.2023.10117998
https://doi.org/10.1109/irps48203.2023.10117998
Autor:
Limeng Shi, Shengnan Zhu, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47928671b1cf39b0422988de262f6d79
https://doi.org/10.1109/irps48203.2023.10118276
https://doi.org/10.1109/irps48203.2023.10118276
Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs
Autor:
Limeng Shi, Tianshi Liu, Shengnan Zhu, Jiashu Qian, Michael Jin, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b0dd612d92183afb078c5afa2c7b1f3
https://doi.org/10.1109/wipda56483.2022.9955295
https://doi.org/10.1109/wipda56483.2022.9955295
Autor:
Jiashu Qian, Tianshi Liu, Jake Soto, Mowafak M. Al-Jassim, Robert Stahlbush, Nadeemullah Mahadik, Limeng Shi, Michael Jin, Anant K. Agarwal
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7299f3d75041f6ce777e46740568ac52
https://doi.org/10.1109/wipda56483.2022.9955255
https://doi.org/10.1109/wipda56483.2022.9955255
Publikováno v:
Fuel. 314:122794
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ae19036a8875e252f1f73eb215bc3a8
https://doi.org/10.1016/j.fuel.2021.122794
https://doi.org/10.1016/j.fuel.2021.122794