Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jiaqiang Shen"'
Publikováno v:
Frontiers in Psychology, Vol 13 (2022)
As an important strategic decision for enterprise sustainability, the green entrepreneurial orientation can facilitate boundary-spanning search for external knowledge and resources to achieve triadic sustainable economic, environmental, and social pe
Externí odkaz:
https://doaj.org/article/0f2a27b4b86e47f7a2fc3708f3a211db
Publikováno v:
2020 China Semiconductor Technology International Conference (CSTIC).
As a typical representative of two-dimensional (2D) materials, recently Mos2 was considered as the candidate to the development of electronic synaptic devices due to its ultrathin thickness and special properties. However, dual-terminal artificial sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::075e06ad4cbb0fba24cbc529778fe22b
https://doi.org/10.1109/cstic49141.2020.9282520
https://doi.org/10.1109/cstic49141.2020.9282520
Publikováno v:
2020 China Semiconductor Technology International Conference (CSTIC).
Two-dimensional (2D) heterostructures based on transition metal dichalcogenides have sparked significant attention due to their excellent electrical and optical properties. However, synthesis of heterojunction is still a challenge. In this work, Mos2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::286953f83f126e1dbe90b94f1d7e923b
https://doi.org/10.1109/cstic49141.2020.9282575
https://doi.org/10.1109/cstic49141.2020.9282575
Autor:
Jiaqiang, Shen, Baozeng, Zhou, Fang, Wang, Qing, Wan, Xin, Shan, Chuang, Li, Xin, Lin, Kailiang, Zhang
Publikováno v:
Nanotechnology. 31(26)
Both synaptic emulators and brain-like calculation demand an energy-efficient and bio-realistic device where two-dimensional materials have been proven as a promising competitor. Lateral memristors based on transfer-free single-crystal MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f98b5df76311a1afe5cbd02f675b298c
https://pubmed.ncbi.nlm.nih.gov/32208376
https://pubmed.ncbi.nlm.nih.gov/32208376
Autor:
Baojun Zhang, Jiaqiang Shen, Junqing Wei, Xin Lin, Xin Shan, Xichao Di, Kailiang Zhang, Yaowu Hao, Fang Wang
Publikováno v:
Materials Science and Engineering: B. 261:114756
Two-dimensional tungsten disulfide (WS2) has been widely studied owing to its superior optical and electrical properties. Since the growth mechanism is unclear, controllable synthesis of 2D WS2 is still a challenge. Based on the analysis of the relat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b39e3dddb3fbda70721d1e5b49da1a2d
https://doi.org/10.1016/j.mseb.2020.114756
https://doi.org/10.1016/j.mseb.2020.114756
Autor:
Hu Kai, Wang Fang, Jingwei Zhang, Chuang Li, Jingsi Sun, Li Wenxi, Zhao Jinshi, Jiaqiang Shen, Kailiang Zhang
Publikováno v:
Materials Science in Semiconductor Processing. 116:105103
In this work, three indium tin oxide (ITO) films with distinct resistance values were realized by optimizing the deposition process, and X-ray photoelectron spectroscopy was performed to confirm the origin of resistance variation in the different ITO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ed1238fd622cebfd9ad70262c828cb7
https://doi.org/10.1016/j.mssp.2020.105103
https://doi.org/10.1016/j.mssp.2020.105103
Low consumption two-terminal artificial synapse based on transfer-free single-crystal MoS2 memristor
Autor:
Chuang Li, Fang Wang, Jiaqiang Shen, Xin Shan, Kailiang Zhang, Xin Lin, Baozeng Zhou, Qing Wan
Publikováno v:
Nanotechnology. 31:265202
Both synaptic emulators and brain-like calculation demand an energy-efficient and bio-realistic device where two-dimensional materials have been proven as a promising competitor. Lateral memristors based on transfer-free single-crystal MoS2 with sing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::054fdbcd503f29439db17deb95843330
https://doi.org/10.1088/1361-6528/ab82d6
https://doi.org/10.1088/1361-6528/ab82d6
Autor:
Chuang Li, Fang Wang, Wenxi Li, Tian-Ling Ren, Kailiang Zhang, Jiaqiang Shen, Junqing Wei, Jinshi Zhao, Xin Shan, Zhitang Song, Jingwei Zhang
Publikováno v:
physica status solidi (a). 216:1900555
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8ded1a27d450afec7c78477a7ed983e
https://doi.org/10.1002/pssa.201900555
https://doi.org/10.1002/pssa.201900555
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Akademický článek
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