Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Jianxiong Xi"'
Autor:
Jianxiong Xi, Ding Ding, Huiwei Zhu, Ruru Wang, Feng Su, Wanqing Wu, Zhenxu Xiao, Xiaoniu Liang, Qianhua Zhao, Zhen Hong, Hua Fu, Qianyi Xiao
Publikováno v:
BMC Microbiology, Vol 21, Iss 1, Pp 1-13 (2021)
Abstract Background Gut microbiota (GMB) alteration has been reported to influence the Alzheimer’s disease (AD) pathogenesis through immune, endocrine, and metabolic pathways. This study aims to investigate metabolic output of the dysbiosis of GMB
Externí odkaz:
https://doaj.org/article/05eabf6f3d9a4615ae158e1d74a911aa
Autor:
Qianyi Xiao, Jianxiong Xi, Ruru Wang, Qianhua Zhao, Xiaoniu Liang, Wanqing Wu, Li Zheng, Qihao Guo, Zhen Hong, Hua Fu, Ding Ding
Publikováno v:
Frontiers in Genetics, Vol 13 (2022)
Background: Genome-wide association studies have identified many Alzheimer’s disease (AD) genetic-risk single nucleotide polymorphisms (SNPs) and indicated the important role of the cholesterol/lipid metabolism pathway in AD pathogenesis. This stud
Externí odkaz:
https://doaj.org/article/b3945f14aebe46d59211cfe7e5fe4b3d
Publikováno v:
IEICE Electronics Express.
Autor:
Wanqing Wu, Huiwei Zhu, Qianhua Zhao, Ruru Wang, Zhen Hong, Xiaoniu Liang, Qianyi Xiao, Zhenxu Xiao, Feng Su, Hua Fu, Ding Ding, Jianxiong Xi
Publikováno v:
BMC Microbiology, Vol 21, Iss 1, Pp 1-13 (2021)
BMC Microbiology
BMC Microbiology
Background Gut microbiota (GMB) alteration has been reported to influence the Alzheimer’s disease (AD) pathogenesis through immune, endocrine, and metabolic pathways. This study aims to investigate metabolic output of the dysbiosis of GMB in AD pat
Publikováno v:
Journal of Sensors, Vol 2021 (2021)
A power management system is a critical component of the system which needs Li-ion battery packs for power supply. This paper proposes a fully integrated, high-precision, and high-reliability Integrated Circuit (IC) for the power management system of
Publikováno v:
Microelectronics Journal. 136:105794
Publikováno v:
IET Power Electronics. 13:3777-3786
The active clamp flyback (ACF) converter utilising gallium nitride (GaN) devices with high-switching frequency and high efficiency is impressive in system miniaturisation for AC–DC adapters. Owing to poor reverse conduction of GaN devices, the impr
Publikováno v:
IEEE Transactions on Industrial Electronics. 67:1446-1454
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are promising power devices due to their excellent characteristics. However, GaN HEMTs have vulnerable gates that are susceptible to noise and voltage spikes, limiting their implementat
Autor:
Qianyi, Xiao, Jianxiong, Xi, Ruru, Wang, Qianhua, Zhao, Xiaoniu, Liang, Wanqing, Wu, Li, Zheng, Qihao, Guo, Zhen, Hong, Hua, Fu, Ding, Ding
Publikováno v:
Frontiers in genetics. 13
Publikováno v:
IEICE Electronics Express. 19:20220390-20220390