Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Jianhui Shan"'
Autor:
Margareta Paunescu, Eri Hirahara, Edward Ng, EunJeong Jeong, Durairaj Baskaran, Guanyang Lin, SungEun Hong, Jianhui Shan, Orest Polishchuk, Jihoon Kim, Yi Cao, Jian Yin, Jin Li
Publikováno v:
Journal of Photopolymer Science and Technology. 29:679-684
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74000171685aafd512b01d248fbcf928
https://doi.org/10.2494/photopolymer.29.679
https://doi.org/10.2494/photopolymer.29.679
Autor:
Jianhui Shan, Kazunori Kurosawa, Hengpeng Wu, Shinji Miyazaki, Young Jun Her, Jihoon Kim, Jian Yin, Yi Cao, Guanyang Lin, Jingxiu Wan
Publikováno v:
Journal of Photopolymer Science and Technology. 26:573-579
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a8ef6a39a058d808b68e8143b0df617
https://doi.org/10.2494/photopolymer.26.573
https://doi.org/10.2494/photopolymer.26.573
Autor:
Jihoon Kim, Guanyang Lin, SungEun Hong, Margareta Paunescu, Jianhui Shan, Durairaj Baskaran, Jin Li, Edward Ng, Jian Yin, Eri Hirahara, EunJeong Jeong, Yi Cao, Orest Polishchuk
Publikováno v:
SPIE Proceedings.
To extend directed self-assembly (DSA) of poly(styrene-b-methyl methacrylate) (PS- b -PMMA) for higher resolution, placement accuracy and potentially improved pattern line edge roughness (LER), we have developed a next-generation material platform of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29e3f1db63fcb37fd7278a579f6de4fc
https://doi.org/10.1117/12.2220424
https://doi.org/10.1117/12.2220424
Autor:
Margareta Paunescu, Anindarupa Chunder, Khanh Nguyen, Noel Arellano, Jihoon Kim, Hsinyu Tsai, Orest Polishchuk, Ankit Vora, Eri Hirahara, Durairaj Baskaran, Edward Ng, Guanyang Lin, SungEun Hong, Chi-Chun Liu, EunJeong Jeong, Charles T. Rettner, Elizabeth Lofano, Joy Cheng, A. N. Bowers, Jianhui Shan, Alexander Friz, Daniel P. Sanders, Melia Tjio, Srinivasan Balakrishnan
Publikováno v:
Advances in Patterning Materials and Processes XXXII.
To extend scaling beyond poly(styrene-b-methyl methacrylate) (PS-b-PMMA) for directed self-assembly (DSA), high quality organic high-x block copolymers (HC series) were developed and applied to implementation of sub-10 nm L/S DSA. Lamellae-forming bl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e33e10a9062cd8e4e79700ecd2d8874f
https://doi.org/10.1117/12.2087398
https://doi.org/10.1117/12.2087398
Autor:
Jianhui Shan, Tomohiko Tsutsumi, YoungJun Her, Yi Cao, Hengpeng Wu, Jian Yin, Jihoon Kim, Claire Petermann, Guanyang Lin
Publikováno v:
Alternative Lithographic Technologies VII.
Significant progresses on 300 mm wafer level DSA (Directed Self-Assembly) performance stability and pattern quality were demonstrated in recent years. DSA technology is now widely regarded as a leading complementary patterning technique for future no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::876348435a07c915970330072bee7332
https://doi.org/10.1117/12.2086160
https://doi.org/10.1117/12.2086160
Autor:
Huirong Yao, Salem K. Mullen, Mark Neisser, Zachary Bogusz, Guanyang Lin, Jianhui Shan, Joonyeon Cho
Publikováno v:
SPIE Proceedings.
EUV lithography is expected to be an important technology for manufacturing 22 nm node and beyond in the semiconductor industry. To achieve the desired resist RLS performance for such fine feature patterns, multilayer materials are almost certainly n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ab6a25050928bd96ffd5701dea82e73
https://doi.org/10.1117/12.881639
https://doi.org/10.1117/12.881639
Autor:
Zhong Xiang, Mark Neisser, Huirong Yao, Guanyang Lin, Walter Liu, Jianhui Shan, Salem K. Mullen, Elleazar Gonzalez, Jian Yin
Publikováno v:
Advances in Resist Materials and Processing Technology XXV.
As critical dimensions in integrated circuit (IC) device fabrication continue to shrink to less than 90 nm, designing multi-functional organic bottom anti-reflective coating (BARC) materials has become a challenge. In this paper, we report novel high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::897001b2e5ce0bc7a9eab7929ee2a58d
https://doi.org/10.1117/12.773400
https://doi.org/10.1117/12.773400
Autor:
Huirong Yao, Dave Abdallah, Zhong Xiang, Jianhui Shan, Hong Zhuang, Salem K. Mullen, Hengpeng Wu, Jian Yin, Mark Neisser, Eleazar Gonzalez
Publikováno v:
SPIE Proceedings.
Substrate reflectivity control plays an important role in immersion lithography. Multilayer bottom anti-reflective coatings (B.A.R.C.s) become necessary. This paper will focus on the recent development in organic ArF B.A.R.C. for immersion lithograph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba0d6a1476ef703ec02297751834c12e
https://doi.org/10.1117/12.710669
https://doi.org/10.1117/12.710669
Autor:
Eugene Joseph Karwacki, Ping-Hung Lu, Bing Ji, Peter R. Badowski, Hong Zhuang, Zhong Xiang, Hengpeng Wu, Jianhui Shan, Dave Abdallah, Mark Neisser
Publikováno v:
SPIE Proceedings.
As the feature sizes of integrated circuits shrink, highly anisotropic etching process (i.e., ion-assisted plasma etch, or reactive ion etch (RIE)), becomes even more essential for successful pattern transfer in the fabrication of semiconductor devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0928022a0e3f8a65af3e8c36f75f29d5
https://doi.org/10.1117/12.657128
https://doi.org/10.1117/12.657128
Autor:
David J. Abdallah, Eleazar Gonzalez, Zhong Xiang, Aritaka Hishida, Shuji S. Ding, Jianhui Shan, Hengpeng Wu, Mark Neisser
Publikováno v:
SPIE Proceedings.
As the semiconductor industry sails into the 100nm node and beyond, enabled by the integration of ArF lithography, new Bottom Antireflective Coatings (B.A.R.C.s) are required to address challenges associated with this new technology. Of these challen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d77b9663264ed3678c5190810afd8fe6
https://doi.org/10.1117/12.537883
https://doi.org/10.1117/12.537883