Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Jiangping Dai"'
Autor:
Shucheng Ge, Jiangping Dai, Na Gao, Shiqiang Lu, Penggang Li, Kai Huang, Bin Liu, Junyong Kang, Rong Zhang, Youdou Zheng
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019)
Abstract Deep ultraviolet AlGaN-based nanorod (NR) arrays were fabricated by nanoimprint lithography and top-down dry etching techniques from a fully structural LED wafer. Highly ordered periodic structural properties and morphology were confirmed by
Externí odkaz:
https://doaj.org/article/c10918848abf4f94acdd81e2f0ab0771
Autor:
Ting Zhi, Tao Tao, Yugang Zhou, Dunjun Chen, Rong Zhang, Hai Lu, Jiangping Dai, Bin Liu, Lei Jianming, Zili Xie
Publikováno v:
IEEE Photonics Technology Letters. 31:1697-1700
Current-voltage ( I-V ) characteristics of AlGaN ultraviolet light-emitting diodes (UV-LEDs) under the temperatures ranging from 50 K to 300 K are analyzed. The abnormal diode characteristics of UV-LEDs below the turn-on voltage indicate the existenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b4419387271f5b953fb9d2fbdca39fd
https://doi.org/10.1109/lpt.2019.2942612
https://doi.org/10.1109/lpt.2019.2942612
Autor:
Zhe Zhuang, Xu Guo, Bin Liu, Fengrui Hu, Yi Li, Tao Tao, Jiangping Dai, Ting Zhi, Zili Xie, Peng Chen, Dunjun Chen, Haixiong Ge, Xiaoyong Wang, Min Xiao, Yi Shi, Youdou Zheng, Rong Zhang
Publikováno v:
Advanced Functional Materials. 32:2200988
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ca6f9f0a7c3b5cb2f51221a8f63178
https://doi.org/10.1002/adfm.202200988
https://doi.org/10.1002/adfm.202200988
Autor:
Guotang He, Ping Han, Rong Zhang, Tao Tao, Zili Xie, Dunjun Chen, Peng Chen, Xiangqian Xiu, Jiangping Dai, Bin Liu, Qingjun Xu, Shiying Zhang
Publikováno v:
Superlattices and Microstructures. 101:144-151
High-Al-content AlxGa1−xN films with x varying from 0.33 to 0.79 were grown on GaN templates with the high temperature AlN (HT-AlN) interlayer by metal organic chemical vapor deposition (MOCVD). The best crystalline quality, among these AlxGa1−xN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e123eeaa236a7ad9ea7bd9ee0658e6a8
https://doi.org/10.1016/j.spmi.2016.11.029
https://doi.org/10.1016/j.spmi.2016.11.029
Autor:
Ping Han, Ting Zhi, Zhigang Zou, Zili Xie, Jiangping Dai, Rong Zhang, Wenjun Luo, Bin Liu, Zhe Zhuang, Mingxue Li, Dunjun Chen, Youdou Zheng, Tao Tao, Guogang Zhang, Zhaosheng Li, Yi Li, Peng Chen
Publikováno v:
physica status solidi (a). 213:2704-2708
III-Nitride semiconductor materials are considered as promising candidates for photoelectrodes (PEs) due to their adjustable direct band gap covering a very broad spectral range. In this study, InGaN/GaN based p–i–n photoelectrodes have been fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d173a39a243eb4fe23ed61d50aa9a789
https://doi.org/10.1002/pssa.201532545
https://doi.org/10.1002/pssa.201532545
Autor:
Rong Zhang, Peng Chen, Zili Xie, Yi Li, Tao Tao, Zhe Zhuang, Guogang Zhang, Ting Zhi, Jiangping Dai, Bin Liu
Publikováno v:
IEEE Photonics Technology Letters. 28:721-724
InGaN/GaN single nanorod (NR) light-emitting diodes (LEDs) have successfully been fabricated by nanoimprint lithography and focused ion beam-induced deposition. The current–voltage characteristics of single NR LEDs show low leakage current of $2\ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0434f904590b584f19e06ef4faaddd9
https://doi.org/10.1109/lpt.2015.2506184
https://doi.org/10.1109/lpt.2015.2506184
Autor:
Tao Tao, Jiangping Dai, Cao Xianlei, Gao Wang, Bin Liu, Dunjun Chen, Hong Zhao, Han Ping, Zili Xie, Rong Zhang
Publikováno v:
Applied Surface Science. 364:886-891
We have designed one kind of optical filters based on double stacks of 13.5-pairs SiO 2 /Si 3 N 4 dielectric distributed Bragg reflector (DDBR) structures, to realize the passband with different central wavelengths in ultraviolet (UV) range. These Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d10a7ea057d8da86e3c728362a2e027c
https://doi.org/10.1016/j.apsusc.2015.12.222
https://doi.org/10.1016/j.apsusc.2015.12.222
Autor:
Zhe Zhuang, Yi Li, Bin Liu, Xu Guo, Jiangping Dai, Guogang Zhang, Tao Tao, Ting Zhi, Zili Xie, Haixiong Ge, Yi Shi, Youdou Zheng, Rong Zhang
Publikováno v:
Journal of Applied Physics; 2015, Vol. 118 Issue 23, p2331-233111-7, 7p, 1 Diagram, 6 Graphs
Autor:
Yi Li, Bin Liu, Rong Zhang, Zili Xie, Zhe Zhuang, JiangPing Dai, Tao Tao, Ting Zhi, Guogang Zhang, Peng Chen, Fangfang Ren, Hong Zhao, Youdou Zheng
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 15, p153103-1-153103-5, 5p, 1 Diagram, 4 Graphs
Autor:
Na Gao, Jiangping Dai, Penggang Li, Youdou Zheng, Ge Shucheng, Junyong Kang, Shiqiang Lu, Bin Liu, Kai Huang, Rong Zhang
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019)
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019)
Deep ultraviolet AlGaN-based nanorod (NR) arrays were fabricated by nanoimprint lithography and top-down dry etching techniques from a fully structural LED wafer. Highly ordered periodic structural properties and morphology were confirmed by scanning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35e02c5b0ea1b570fa72f7849350dba1
https://pubmed.ncbi.nlm.nih.gov/31115700
https://pubmed.ncbi.nlm.nih.gov/31115700