Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Jiangpeng, Dong"'
Autor:
Rui Wu, Yang Kang, Dengke Wei, Donghai Fan, Yingrui Li, Sen Wu, Jiangpeng Dong, Donglei Chen, Tingting Tan, Gangqiang Zha
Publikováno v:
IEEE Transactions on Nuclear Science. 69:1773-1779
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c493d63a552d4ac39b83f52743ec56f4
https://doi.org/10.1109/tns.2022.3170427
https://doi.org/10.1109/tns.2022.3170427
Autor:
Xiufang Zhai, Jinlong Fan, Jiangpeng Dong, Yufeng Wang, Tao Bai, Jiangfan Wang, Xiangbo Zhang, Guowei Chen
Publikováno v:
Journal of Radioanalytical and Nuclear Chemistry. 331:2911-2917
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c5db4521dd583773319d7743e72e671
https://doi.org/10.1007/s10967-022-08360-8
https://doi.org/10.1007/s10967-022-08360-8
Publikováno v:
AIP Advances, Vol 9, Iss 9, Pp 095058-095058-6 (2019)
ZnSe films with a sphalerite structure and about 100nm grain size were deposited on ITO substrate. 200 stable bipolar resistive switching (RS) cycles were obtained in Au/ZnSe/ITO chalcogenide-based memory cells and it shows an ON/OFF ratio of 10 and
Externí odkaz:
https://doaj.org/article/a6855e3db4714ada8120bbf972ba91c3
Autor:
Yingrui Li, Gangqiang Zha, Dengke Wei, Fan Yang, Jiangpeng Dong, Shouzhi Xi, Lingyan Xu, Wanqi Jie
Publikováno v:
Sensors, Vol 20, Iss 7, p 2032 (2020)
The effect of deep-level defects is a key issue for the applications of CdZnTe high-flux photon counting devices of X-ray irradiations. However, the major trap energy levels and their quantitive relationship with the device’s performance are not ye
Externí odkaz:
https://doaj.org/article/90f2e943068a4efa86fbb917195ff567
Autor:
Jiangpeng, Dong, Tao, Bai, Yaowen, Hu, Xiangbo, Zhang, Jinlong, Fan, Yihua, Dai, Liangliang, Miao, Xiaoren, Yu, Zhiming, Li
Publikováno v:
Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine. 193
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::63b3272a03989aa99c89abb33772735f
https://pubmed.ncbi.nlm.nih.gov/36603457
https://pubmed.ncbi.nlm.nih.gov/36603457
Autor:
Jiangpeng Dong, Tao Bai, Yihua Dai, Xiangbo Zhang, Jinlong Fan, Yaowen Hu, Xiaojing Song, Yan Ma, Liangliang Miao, Quanlin Shi, Zhiming Li
Publikováno v:
Applied Radiation and Isotopes. 194:110689
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec85d0a243915e4922ade6de654cb93d
https://doi.org/10.1016/j.apradiso.2023.110689
https://doi.org/10.1016/j.apradiso.2023.110689
Autor:
Jiangpeng Dong, Tao Bai, Yaowen Hu, Xiangbo Zhang, Jinlong Fan, Yihua Dai, Liangliang Miao, Xiaoren Yu, Zhiming Li
Publikováno v:
Applied Radiation and Isotopes. 193:110647
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3e11681a272414d1ca1e189faef457a
https://doi.org/10.1016/j.apradiso.2022.110647
https://doi.org/10.1016/j.apradiso.2022.110647
Publikováno v:
Journal of Electronic Materials. 49:3907-3912
The correlation between threading dislocations and leakage current in a CdZnTe(001)/GaAs epilayer grown by close-spaced sublimation was studied using scanning electron microscopy, Kelvin probe force microscopy, conductive atomic force microscopy (C-A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60d57b95c9a57fb7c7234280d81d7a3f
https://doi.org/10.1007/s11664-020-08094-x
https://doi.org/10.1007/s11664-020-08094-x
Publikováno v:
Journal of Electronic Materials. 49:4563-4568
We have investigated the influence of rapid thermal annealing (RTA) on the surface defects of CdZnTe (CZT) crystals by using low-temperature photoluminescence (PL) measurements. In the low-temperature PL spectrum for the as-grown CZT crystals, the do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f46a7079c06b888f229d10135e566db
https://doi.org/10.1007/s11664-020-08027-8
https://doi.org/10.1007/s11664-020-08027-8
Anisotropic dielectric behavior of layered perovskite-like Cs3Bi2I9 crystals in the terahertz region
Autor:
Jiangpeng Dong, Alain Dubois, Yadong Xu, Qihao Sun, Menghua Zhu, Yuanbo Cheng, Wenhui Yang, Mengqin Zhu, Binbin Zhang, Wanqi Jie
Publikováno v:
Physical Chemistry Chemical Physics. 22:24555-24560
The ternary metal halide perovskites have gradually attracted attention for application in the optoelectronic field, owing to their tunable crystal structure and appropriate bandgap. Lead free Cs3Bi2I9 perovskite, with a 0D layered structure containi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfdc4e4fd0f8b994b028a8ac2bc5ec57
https://doi.org/10.1039/d0cp04485g
https://doi.org/10.1039/d0cp04485g