Zobrazeno 1 - 10
of 221
pro vyhledávání: '"Jiangnan Dai"'
Autor:
Weijie Liu, Yiye Yu, Meng Peng, Zhihua Zheng, Pengcheng Jian, Yang Wang, Yuanchen Zou, Yongming Zhao, Fang Wang, Feng Wu, Changqing Chen, Jiangnan Dai, Peng Wang, Weida Hu
Publikováno v:
InfoMat, Vol 5, Iss 10, Pp n/a-n/a (2023)
Abstract In the last decade, two‐dimensional layered materials (2DLMs) have been drawing extensive attentions due to their unique properties, such as absence of surface dangling bonds, thickness‐dependent bandgap, high absorption coefficient, lar
Externí odkaz:
https://doaj.org/article/2857357d021f4beab7d5f439d5a5e2c3
Autor:
Yongming Zhao, Maocheng Shan, Zhihua Zheng, Pengcheng Jian, WeiJie Liu, Shizhou Tan, Changqing Chen, Feng Wu, Jiangnan Dai
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract In this paper, we reported on wafer-scale nanoporous (NP) AlGaN-based deep ultraviolet (DUV) distributed Bragg reflectors (DBRs) with 95% reflectivity at 280 nm, using epitaxial periodically stacked n-Al0.62Ga0.38N/u-Al0.62Ga0.38N structures
Externí odkaz:
https://doaj.org/article/6ff1baf60ce745bbac71935ab0b7126b
Publikováno v:
ACS Omega, Vol 5, Iss 17, Pp 9985-9990 (2020)
Externí odkaz:
https://doaj.org/article/7a519f922d634af68613e31acf060b4b
Autor:
Jiahui Hu, Jun Zhang, Yi Zhang, Huixue Zhang, Hanling Long, Qian Chen, Maocheng Shan, Shida Du, Jiangnan Dai, Changqing Chen
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) suffer from electron overflow and insufficient hole injection. In this paper, novel DUV LED structures with superlattice electron deceleration layer (SEDL) is proposed to decele
Externí odkaz:
https://doaj.org/article/a70ed3af719f4a249c5fda6168136cf5
Autor:
Huabin Yu, Qian Chen, Zhongjie Ren, Meng Tian, Shibing Long, Jiangnan Dai, Changqing Chen, Haiding Sun
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 4, Pp 1-6 (2019)
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) grown on c-plane substrates. In this paper, we propose a novel DUV L
Externí odkaz:
https://doaj.org/article/66e50b16644c4749a791ae603c8b38d8
Autor:
Zhongjie Ren, Yi Lu, Hsin-Hung Yao, Haiding Sun, Che-Hao Liao, Jiangnan Dai, Changqing Chen, Jae-Hyun Ryou, Jianchang Yan, Junxi Wang, Jinmin Li, Xiaohang Li
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 2, Pp 1-11 (2019)
AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as epi
Externí odkaz:
https://doaj.org/article/ea02083394c646c990300aac2f6612ce
Autor:
Qian Chen, Jun Zhang, Yang Gao, Jingwen Chen, Hanling Long, Jiangnan Dai, Zi-hui Zhang, Changqing Chen
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 4, Pp 1-7 (2018)
In this paper, a structure of super-lattice structure last barrier (SLSLB) is proposed, which can be applied into the AlGaN-based ultraviolet light-emitting diodes (LEDs) for improving the injection of both electrons and holes. Several other SLSLBs a
Externí odkaz:
https://doaj.org/article/80c832a2afb54afa89d5c0a26c72f636
Autor:
Qian Chen, Huixue Zhang, Jiangnan Dai, Shuang Zhang, Shuai Wang, Ju He, Renli Liang, Zi-Hui Zhang, Changqing Chen
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 4, Pp 1-7 (2018)
In this work, we propose and optimize the sidewalls for the mesa to enhance the optical power for AlGaN-based deep ultraviolet light-emitting diodes (LEDs). We obtain the mesa with the inclined sidewalls by conducting dry etching. The optical perform
Externí odkaz:
https://doaj.org/article/d7dce39dc4f648b6b2b618d559a3a2f0
Autor:
Renli Liang, Jiangnan Dai, Lei Ye, Linlin Xu, Yang Peng, Shuai Wang, Jingwen Chen, Hanling Long, Changqing Chen
Publikováno v:
ACS Omega, Vol 2, Iss 8, Pp 5005-5011 (2017)
Externí odkaz:
https://doaj.org/article/533803b7e93741fe853fef1683f05e99
Publikováno v:
IEEE Photonics Journal, Vol 5, Iss 4, Pp 8200309-8200309 (2013)
In order to improve the performance of deep ultraviolet light-emitting diodes (UV LEDs), the effects of different electron blocking layers (EBLs) on the performance of AlxGa1-xN-based deep UV LEDs at 310 nm have been studied through a numerical simul
Externí odkaz:
https://doaj.org/article/a9af487442294939847f90e959522e00