Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jiangnan, Zhong"'
Autor:
Tang Su, Xixi Xie, Bowen Shen, Shuang Jia, Yang Ma, Wei Yuan, Wei Han, Yunyan Yao, Xirui Wang, Yangyang Chen, Wenyu Xing, Yu Yun, Jiangnan Zhong
Publikováno v:
ACS Applied Materials & Interfaces. 10:1383-1388
Ionic liquid gating can markedly modulate a material’s carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field
Autor:
Mark Lohmann, Yong-Tao Cui, Wei Han, Mohammed Aldosary, Jiangnan Zhong, Wenyu Xing, Shuang Jia, Tang Su, Ruqian Wu, Yusheng Hou, Ben Niu, Jing Shi, Mohammed Alghamdi
Publikováno v:
Nano letters, vol 19, iss 4
Two-dimensional ferromagnet Cr2Ge2Te6 (CGT) is so resistive below its Curie temperature that probing its magnetism by electrical transport becomes extremely difficult. By forming heterostructures with Pt, however, we observe clear anomalous Hall effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e5043c91030612c5219a295bfdef0c6
http://arxiv.org/abs/1903.00569
http://arxiv.org/abs/1903.00569
Autor:
Wei Han, Jiangnan Zhong, Zhisheng Lin, Zulfikhar A. Ali, Sinisa Coh, Mark Lohmann, Shuang Jia, Wenyu Xing, Chi Tang, Junxue Li, Ward P. Beyermann, Jing Shi
Publikováno v:
Physical Review Materials. 2
Author(s): Lin, Zhisheng; Lohmann, Mark; Ali, Zulfikhar A; Tang, Chi; Li, Junxue; Xing, Wenyu; Zhong, Jiangnan; Jia, Shuang; Han, Wei; Coh, Sinisa; Beyermann, Ward; Shi, Jing | Abstract: Anisotropic magnetoresistance (AMR) of Cr2Ge2Te6 (CGT), a layer
Autor:
Bowen Shen, Jiangnan Zhong, Shuang Jia, Tang Su, Wei Han, Wei Yuan, Wenyu Xing, Xie, X. C., Xirui Wang, Yang Ma, Yangyang Chen, Yu Yun, Yunyan Yao
Publikováno v:
Web of Science
Ionic liquid gating can markedly modulate the materials' carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c1dd39baaff1cdde85e997ec441b2d2
http://arxiv.org/abs/1712.08281
http://arxiv.org/abs/1712.08281
Autor:
Yangyang, Chen, Wenyu, Xing, Xirui, Wang, Bowen, Shen, Wei, Yuan, Tang, Su, Yang, Ma, Yunyan, Yao, Jiangnan, Zhong, Yu, Yun, X C, Xie, Shuang, Jia, Wei, Han
Publikováno v:
ACS applied materialsinterfaces. 10(1)
Ionic liquid gating can markedly modulate a material's carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field e
Autor:
Wei Han, Xiao Zhang, Tang Su, Qi Song, Patrick Odenthal, Wenyu Xing, Tianyu Wang, Jiangnan Zhong, Wei Yuan, Xixi Xie, Yangyang Chen, Yan Li, Shuang Jia
Publikováno v:
2D Materials. 4:024009
The emergence of two-dimensional (2D) materials has attracted a great deal of attention due to their fascinating physical properties and potential applications for future nano-electronic devices. Since the first isolation of graphene, a Dirac materia
Autor:
Wenyu Xing, Yangyang Chen, Patrick M Odenthal, Xiao Zhang, Wei Yuan, Tang Su, Qi Song, Tianyu Wang, Jiangnan Zhong, Shuang Jia, X C Xie, Yan Li, Wei Han
Publikováno v:
2D Materials; Jun2017, Vol. 4 Issue 2, p1-1, 1p