Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jianghu Yan"'
Autor:
Suresh Uppal, Talapady Srivatsa Bhat, Shimpei Yamaguchi, Hui Zhan, Xiaobo Chen, Jianghu Yan, Shashidhar Shintri, Suresh Regonda, Yong Jun Shi, Srikanth Samavedam, Qi Yi, Hsien-Ching Lo, Yan Ping Shen, Dongil Choi, Owen Hu, Manoj Joshi, Jianwei Peng, Chloe Yong, Hong Wei, Baofu Zhu
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:N137-N141
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39395ed3644bd0dbf5ce4571033e3367
https://doi.org/10.1149/2.0011709jss
https://doi.org/10.1149/2.0011709jss
Autor:
Yang Zhang, Derya Deniz, Xiaodong Zhang, Garo Jacques Derderian, J.-B. Laloë, Min-Hwa Chi, Singh Sherjang, Kakoli Das, Suraj K. Patil, Jianghu Yan, Wen Pin Peng, Lei Zhu
Publikováno v:
2016 China Semiconductor Technology International Conference (CSTIC).
As dimension of middle-of-line contacts scale down, the Tungsten (W) gap-fill capability is critical, and we starts to see function failure in SRAM and logic circuit caused by W-voids. We had observed that formation of W-voids is related to the conta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a8b9d263892b3b30e319b68b29374c3
https://doi.org/10.1109/cstic.2016.7464004
https://doi.org/10.1109/cstic.2016.7464004
Autor:
Suresh Regonda, Shen Yanping, Owen Hu, Pei Zhao, Jianwei Peng, Hsien-Ching Lo, Xinyuan Dou, Qi Yi, Hong Yu, Rick Carter, Manoj Joshi, Chloe Yong, Srikanth Samavedam, Charlotte Adams, Hui Zhan, Jianghu Yan
Publikováno v:
Semiconductor Science and Technology. 32:094004
Epitaxy growth loading effect—the growth rate difference between device macros due to their local open ratio difference—is an important consideration for device design and thus process optimization. A poor loading process leads to device performa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f9ca9a15bae6801b0def1ca29014947
https://doi.org/10.1088/1361-6641/aa7d3f
https://doi.org/10.1088/1361-6641/aa7d3f
Autor:
Hsien-Ching Lo, Jianwei Peng, Chloe Yong, Suresh Uppal, Yi Qi, Hui Zhan, Yan Ping Shen, Xiaobo Chen, Jianghu Yan, Baofu Zhu, Shashidhar Shintri, Shimpei Yamaguchi, Talapady Bhat, Wei Hong, Yong Jun Shi, Regonda, Suresh, Dongil Choi, Owen Hu, Manoj Joshi, Samavedam, Srikanth
Publikováno v:
ECS Journal of Solid State Science & Technology; 2017, Vol. 6 Issue 8, pN137-N141, 5p
Autor:
Jianwei Peng, Yi Qi, Hsien-Ching Lo, Pei Zhao, Chloe Yong, Jianghu Yan, Xinyuan Dou, Hui Zhan, Yanping Shen, Suresh Regonda, Owen Hu, Hong Yu, Manoj Joshi, Charlotte Adams, Rick Carter, Srikanth Samavedam
Publikováno v:
Semiconductor Science & Technology; Sep2017, Vol. 32 Issue 9, p1-1, 1p