Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Jianghe Feng"'
Autor:
Guoying Dong, Jianghe Feng, Guojuan Qiu, Yuxuan Yang, Qiyong Chen, Yang Xiong, Haijun Wu, Yifeng Ling, Lili Xi, Chen Long, Jibao Lu, Yixin Qiao, Guijuan Li, Juan Li, Ruiheng Liu, Rong Sun
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract Film-thermoelectric cooling devices are expected to provide a promising active thermal management solution with the continues increase of the power density of integrated circuit chips and other electronic devices. However, because the micros
Externí odkaz:
https://doaj.org/article/8353974c723a4f239372361ff79c2223
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 20, Pp n/a-n/a (2024)
Abstract The contact resistivity originating from the metal–semiconductor interface is a crucial factor for conversion efficiency of thermoelectric films devices. Due to anisotropic nature of state‐of‐art Bi2Te3 films, the contact resistivity a
Externí odkaz:
https://doaj.org/article/76def1267c99417881c92ec0f7cfeb76
Publikováno v:
Crystals, Vol 14, Iss 6, p 557 (2024)
Bi1−xSbx crystal is one of the best n-type thermoelectric materials below 200 K, but its weak mechanical strength hinders practical applications for deep refrigeration. Herein, we adopted the mechanical enhancement method of hot extrusion to invest
Externí odkaz:
https://doaj.org/article/77adb52ef1b84758b8866663e8838a87
Autor:
Jianghe Feng, Peijian Lin, Binbin Jiang, Jianmin Yang, Mingyuan Hu, Abid Ahmad, Lin Xie, Jiaqing He
Publikováno v:
Journal of Materiomics, Vol 11, Iss 2, Pp 100875- (2025)
InTe single crystals have demonstrated great promise in the field of thermoelectric materials, particularly when oriented along the [110] direction. This specific crystal orientation exhibits higher electronic conductivity and lower thermal conductiv
Externí odkaz:
https://doaj.org/article/0c153a081cfa46dba194a83acac5c599
Publikováno v:
Crystals, Vol 13, Iss 4, p 601 (2023)
The different masses, ionic radii, and chemical valences of the nonequivalent crystallographic sites of thermoelectric (TE) compounds provide an effective way to modulate the thermoelectric performance by selective substitution. In this work, the sel
Externí odkaz:
https://doaj.org/article/33445084ced547bfbca84d09584499f8
Autor:
Duo Liu, Bangrui Zhu, Jianghe Feng, Yifeng Ling, Jing Zhou, Guojuan Qiu, Menghui Zhou, Juan Li, Xufeng Hou, Baoguo Ren, Yang Huang, Ruiheng Liu
Publikováno v:
ACS Applied Materials & Interfaces. 14:54044-54050
Publikováno v:
Inorganic Chemistry. 61:6711-6714
Autor:
Jianghe Feng, Menghui Zhou, Juan Li, Guoying Dong, Shufang Gao, Erbiao Min, Chuang Zhang, Jiaqing He, Rong Sun, Ruiheng Liu
Publikováno v:
Materials Horizons.
A new method of crystal deformation is presented to simultaneously improve the thermoelectric and mechanical properties of InTe; this results in the successful fabrication of a thermoelectric module with a high heat-to-power conversion efficiency.
Publikováno v:
Journal of Alloys and Compounds. 950:169916
Autor:
Jing Zhou, Jianghe Feng, Hao Li, Duo Liu, Guojuan Qiu, Feng Qiu, Juan Li, Zhong‐Zhen Luo, Zhigang Zou, Rong Sun, Ruiheng Liu
Publikováno v:
Small. :2300654