Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Jiang, Chongyun"'
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures January 2025 165
Autor:
Jiang, Chongyun, Rasmita, Abdullah, Ma, Hui, Tan, Qinghai, Huang, Zumeng, Lai, Shen, Liu, Sheng, Liu, Xue, Xiong, Qihua, Gao, Wei-bo
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE without the plas
Externí odkaz:
http://arxiv.org/abs/2102.03756
Utilizing spin or valley degree of freedom is one of the promising approaches to realize more energy-efficient information processing. In the 2D transition metal dichalcogenide, the spin/valley current can be generated by utilizing the circular photo
Externí odkaz:
http://arxiv.org/abs/1910.13118
Atomically thin magnets are the key element to build up spintronics based on two-dimensional materials. The surface nature of two-dimensional ferromagnet opens up opportunities to improve the device performance efficiently. Here, we report the intrin
Externí odkaz:
http://arxiv.org/abs/1902.07446
Akademický článek
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Publikováno v:
Phys. Rev. B 98, 241410 (2018)
Two dimensional heterostructures are likely to provide new avenues for the manipulation of magnetization that is crucial for spintronics or magnetoelectronics. Here, we demonstrate that optical spin pumping can generate a large effective magnetic fie
Externí odkaz:
http://arxiv.org/abs/1804.00282
Autor:
Jiang, Chongyun, Xu, Weigao, Rasmita, Abdullah, Huang, Zumeng, Li, Ke, Xiong, Qihua, Gao, Wei-bo
Transition metal dichalcogenides (TMDs) have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polar
Externí odkaz:
http://arxiv.org/abs/1703.03133
Autor:
Jiang, Chongyun, Liu, Fucai, Cuadra, Jorge, Huang, Zumeng, Li, Ke, Srivastava, Ajit, Liu, Zheng, Gao, Wei-bo
Atomically thin transition metal dichalcogenides (TMDs) possess coupling of spin and valley degrees of freedom, making them promising for spin-valleytronics. ln monolayer TMDs, the emission helicity is locked to the valleys as a consequence of spin-o
Externí odkaz:
http://arxiv.org/abs/1701.03583
Autor:
Liu, Yulun, Yan, Zuowei, Bai, Ruixue, Zhang, Xilin, Cheng, Xiaoyu, Ren, Yanbo, Zhu, Yaojie, Zhou, Rui, Ma, Hui, Jiang, Chongyun
Publikováno v:
Nano Letters; 9/4/2024, Vol. 24 Issue 35, p10858-10864, 7p
Akademický článek
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