Proximity-induced interfacial room-temperature ferromagnetism in semiconducting Fe3GeTe2

Autor: Zhao, Qianwen, Zhu, Yingmei, Zhang, Hanying, Jiang, Baiqing, Wang, Yuan, Xie, Tunan, Lou, Kaihua, Xia, ChaoChao, Yang, Hongxin, Bi, C.

The discoveries of two-dimensional ferromagnetism and magnetic semiconductors highly enrich the magnetic material family for constructing spin-based electronic devices but with an acknowledged challenge that the Curie temperature (Tc) is usually far

Externí odkaz: http://arxiv.org/abs/2309.06204

Perpendicular magnetic anisotropy in as-deposited CoFeB/MgO thin films

Autor: Lou, Kaihua, Xie, Tunan, Zhao, Qianwen, Jiang, Baiqing, Xia, ChaoChao, Zhang, Hanying, Yao, Zhihong, Bi, Chong

Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energy-efficient spin-orbitronic devices, is a long-standing challenge. Eve

Externí odkaz: http://arxiv.org/abs/2208.14913

Write asymmetry of spin-orbit torque memory induced by in-plane magnetic fields

Autor: Jiang, Baiqing, Wu, Dongyang, Zhao, Qianwen, Lou, Kaihua, Zhao, Yuelei, Zhou, Yan, Tian, C., Bi, Chong

Publikováno v: IEEE Electron Device Letters (2021)

Write asymmetry, the significantly different write current for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in magnetic random-access memory (MRAM). For high-perform

Externí odkaz: http://arxiv.org/abs/2110.12116

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Proximity-Induced Interfacial Room-Temperature Ferromagnetism in Semiconducting Fe 3 GeTe 2 .

Autor: Zhao Q; Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.; University of Chinese Academy of Sciences, Beijing 100049, China., Zhu Y; National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China., Zhang H; Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.; University of Chinese Academy of Sciences, Beijing 100049, China., Jiang B; Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.; University of Chinese Academy of Sciences, Beijing 100049, China., Wang Y; Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.; University of Chinese Academy of Sciences, Beijing 100049, China., Xie T; Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.; University of Chinese Academy of Sciences, Beijing 100049, China., Lou K; Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.; University of Chinese Academy of Sciences, Beijing 100049, China., Xia C; Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.; School of Microelectronics, University of Science and Technology of China, Hefei 230026, China., Yang H; National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China., Bi C; Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.; University of Chinese Academy of Sciences, Beijing 100049, China.; School of Microelectronics, University of Science and Technology of China, Hefei 230026, China.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Oct 04; Vol. 15 (39), pp. 46520-46526. Date of Electronic Publication: 2023 Sep 22.