Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Jianchi Zhang"'
Publikováno v:
AIP Advances, Vol 5, Iss 9, Pp 097211-097211-9 (2015)
Ferroelectric polymer-based memory devices have attracted much attention due to their potential in low-cost flexible memories. However, bad retention property of recorded logic states limited their applications. Though mechanisms of retention degrada
Externí odkaz:
https://doaj.org/article/d79681296ae441aa9895e2af49670f04
Publikováno v:
Soft Computing
Robots with visual sensors have been used in various goods logistics, such as bin picking or uploading. However, there are more and more demands for the automatic blanking and loading, it is necessary to solve the problem of object pose estimation in
Autor:
Matthew Jerry, Pankaj Sharma, Kai Ni, Suman Datta, Kandabara Tapily, Souvik Mahapatra, Robert D. Clark, Jeffery A. Smith, Jianchi Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 65:2461-2469
We fabricate, characterize, and establish the critical design criteria of Hf0.5Zr0.5O2 (HZO)-based ferroelectric field effect transistor (FeFET) for nonvolatile memory application. We quantify ${V}_{\textsf {TH}}$ shift from electron (hole) trapping
Publikováno v:
IEEE Electron Device Letters. 39:272-275
To reduce the power consumption in scaled CMOS integrated circuits, transistors operating at low supply voltage with steep subthreshold swing (SS) are highly desirable. The negative capacitance (NC) effect in ferroelectric materials has emerged as a
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
The memory requirement of at-scale deep neural networks (DNN) dictate that synaptic weight values be stored and updated in off-chip memory such as DRAM, limiting the energy efficiency and training time. Monolithic cross-bar / pseudo cross-bar arrays
Publikováno v:
2017 75th Annual Device Research Conference (DRC).
The subthreshold swing (SS) in MOSFETs is limited to 60 mV/dec change in drain current at room temperature by the Boltzmanr distribution of carriers, thus limiting its operating voltage (V D >SS×log I on /I OFF ). Ferroelectric FETs can achieve sub-
Autor:
Gregory L. Snider, Suman Datta, Sumeet Kumar Gupta, Kandabara Tapily, Ahmedullah Aziz, Pankaj Sharma, A. Shaughnessy, Jianchi Zhang, Robert D. Clark, Atanu K. Saha
Publikováno v:
2017 Symposium on VLSI Technology.
We report, for the first time, a gate last process, used to fabricate Negative Capacitance field effect transistors (NCFETs) with Hf 0.5 Zr 0.5 O 2 (HZO) as ferroelectric (FE) dielectric in a metal/ferroelectric/insulator/semiconductor (MFIS) configu
Autor:
Pai-Yu Chen, Michael Niemier, Kai Ni, Shimeng Yu, X. Sharon Hu, Suman Datta, Jianchi Zhang, Arman Kazemi, Matthew Jerry, Pankaj Sharma, Sourav Dutta
Publikováno v:
Journal of Physics D: Applied Physics. 51:434001
Dense analog synaptic crossbar arrays are a promising candidate for neuromorphic hardware accelerators due to the ability to mitigate data movement by performing in-situ vector-matrix products and weight updates within the storage array itself. Howev
Publikováno v:
IEEE Electron Device Letters. 27:317-319
This paper reports the first demonstration of a microwave-frequency operation of a GaAs MOSFET fabricated using a wet thermal oxidization of InAlP lattice-matched to GaAs to form a native-oxide gate insulator. Devices with 1-/spl mu/m gate lengths ex
Publikováno v:
2007 65th Annual Device Research Conference.
GaAs based MOSFETs have attracted significant interest as a potential technology for both digital and RF applications. Among many candidate gate insulating materials, the native oxide of InAlP offers a low leakage current and modest interface state d