Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Jian-Yong Jiang"'
Autor:
Zhong-Hui Shen, Jian-Jun Wang, Jian-Yong Jiang, Sharon X. Huang, Yuan-Hua Lin, Ce-Wen Nan, Long-Qing Chen, Yang Shen
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
Polymer dielectrics are promising for high-density energy storage but dielectric breakdown is poorly understood. Here, a phase-field model is developed to investigate electric, thermal, and mechanical effects in the breakdown process for a range of p
Externí odkaz:
https://doaj.org/article/b2841d10e9d64efca26f0c27e864440d
Autor:
JIAN-YONG JIANG, 蔣建勇
107
Nanoporous holey-graphene (HG) recently, made a sensation in scientific and industrial community because of its just actualized versatile potentials in several technologically important fields. The versatility of HG demands a complete contro
Nanoporous holey-graphene (HG) recently, made a sensation in scientific and industrial community because of its just actualized versatile potentials in several technologically important fields. The versatility of HG demands a complete contro
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/ptq3eg
Publikováno v:
Rare Metals. 42:1912-1922
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5853d3c6e1e6ed3fe1db64ae588fec32
https://doi.org/10.1007/s12598-022-02241-5
https://doi.org/10.1007/s12598-022-02241-5
Autor:
Fuming Chen, Shih Ming He, Jian Yong Jiang, Dipak Dutta, Yu Han Hung, Anif Jamaluddin, Jeng Kuei Chang, Ching Yuan Su
Publikováno v:
ACS Applied Materials & Interfaces. 11:36560-36570
Nanoporous holey-graphene (HG) shows potential versatility in several technological fields, especially in biomedical, water filtration, and energy storage applications. Particularly, for ultrahigh electrochemical energy storage applications, HG has s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e0f83222e3e3836ff9ebbbbceefdc13
https://doi.org/10.1021/acsami.9b09927
https://doi.org/10.1021/acsami.9b09927
Autor:
Jian Yong Jiang, Jianjun Wang, Long Qing Chen, Ce-Wen Nan, Zhonghui Shen, Yang Shen, Sharon X. Huang, Yuanhua Lin
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
Nature Communications
Nature Communications
Understanding the breakdown mechanisms of polymer-based dielectrics is critical to achieving high-density energy storage. Here a comprehensive phase-field model is developed to investigate the electric, thermal, and mechanical effects in the breakdow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb4bb706d4072c2469529e02b479383a
https://doaj.org/article/b2841d10e9d64efca26f0c27e864440d
https://doaj.org/article/b2841d10e9d64efca26f0c27e864440d
Autor:
Jia-Cheng Wang, Zhong-Hui Shen, Jian-Yong Jiang, Jian Wang, Xin Zhang, Jie Shen, Yang Shen, Wen Chen, Long-Qing Chen, Ce-Wen Nan
Publikováno v:
Composites Science and Technology. 225:109517
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::869f6b4307b9e9ef65e8c061696b759f
https://doi.org/10.1016/j.compscitech.2022.109517
https://doi.org/10.1016/j.compscitech.2022.109517
Autor:
Yi Yang, Xuan-Jie Liu, Peng He, Xiao-Jun Chen, Ri-hui Sun, Paul-Chang Lin, Jian-Yong Jiang, Guang-Ning Li
Publikováno v:
ECS Transactions. 52:443-451
TSV (Through Silicon Via) is a new method for 3D technology (IC integration). Different chips can be connected with the Cu line through silicon substrate. Via area is so deep (usually 100-300um) that we need thicker barrier and seed layer. The Cu pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3339eb08d1c3dffe5ed26ebfadfa50d8
https://doi.org/10.1149/05201.0443ecst
https://doi.org/10.1149/05201.0443ecst
Publikováno v:
ECS Transactions. 44:505-509
Self Ionized Plasma (SIP) Ti/TiN Process is used for barrier and glue layer before tungsten deposition in backend-of-the-line (BEOL). Long Throw technology and AC Bias are applied to gain better step coverage. But wafer backside arcing case happened
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ea56b21497d254cefb2f556c3d5dd5a
https://doi.org/10.1149/1.3694361
https://doi.org/10.1149/1.3694361
Publikováno v:
ECS Transactions. 44:737-743
Hillock is formed at the film surface in Cu metallization process. During the growth of hillock, the tensile stress built in the copper (Cu) metal film due to the relieved thermal expansion coefficients. These "hillocks" are just areas of localized c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b417dad472f45606a84f70f7d31e30f0
https://doi.org/10.1149/1.3694392
https://doi.org/10.1149/1.3694392
Publikováno v:
ECS Transactions. 44:745-749
Via bottom void is one of the problems related to the metal interconnections in semiconductor devices. In 0.13μm technology, Novellus Sabre serial is wildly applied as copper(Cu) electro chemical plating (ECP) tool, but the problem of high hit ratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dd4cda46b8a4cee3b0db374e949db57
https://doi.org/10.1149/1.3694393
https://doi.org/10.1149/1.3694393