Zobrazeno 1 - 10
of 205
pro vyhledávání: '"Jian-Jang Huang"'
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-14 (2024)
Abstract Enhancement of nanoscale confinement in the subwavelength waveguide is a concern for advancing future photonic interconnects. Rigorous innovation of plasmonic waveguide-based structure is crucial in designing a reliable on-chip optical waveg
Externí odkaz:
https://doaj.org/article/957155675f75405db5a71ccf58a6c9dd
Publikováno v:
Discover Nano, Vol 18, Iss 1, Pp 1-9 (2023)
Abstract The traditional method of monitoring the oxidation and reduction of biomedical materials usually relies on electrochemical (EC) measurement techniques. Here, we demonstrate a surface plasmon resonance (SPR) method to monitor the oxidation pr
Externí odkaz:
https://doaj.org/article/731dae7692e84559950dbcc01d23c883
Autor:
Chen-Wei Hua, Jian-Jang Huang
Publikováno v:
AIP Advances, Vol 13, Iss 12, Pp 125116-125116-8 (2023)
Three-dimensional (3D) topological insulators (TIs) exhibit spin-polarized surface states in which the spin of electrons is locked to their momentum. The helical surface states can be explored from circularly polarized light-induced spin photocurrent
Externí odkaz:
https://doaj.org/article/c5677b547d2741c89079f47913322642
Publikováno v:
IEEE Access, Vol 11, Pp 98452-98457 (2023)
Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses. However, typical gallium nitride (GaN) transistors have a higher v
Externí odkaz:
https://doaj.org/article/fdc628e9623349a48518baeebcddc8bf
Publikováno v:
Mathematics, Vol 11, Iss 21, p 4553 (2023)
A single-phase five-level T-type topology has been investigated in this article. This topology has emerged as a viable option for renewable energy systems (RES) due to its inherent benefits. The finite control set model predictive control (FCS-MPC) s
Externí odkaz:
https://doaj.org/article/baa7e4cd1af6480a8ba1a49b660e91f4
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 59-64 (2022)
Surface traps on GaN-based HEMTs (high-electron-mobility transistors) usually result in the increase of channel on-resistance. It becomes worsen when short pulses are applied during high-frequency and high voltage switching. Here we present a dual-ga
Externí odkaz:
https://doaj.org/article/b6f9aa28ceb54898907200cd5ee12d2d
Publikováno v:
ACS Omega, Vol 6, Iss 18, Pp 11911-11917 (2021)
Externí odkaz:
https://doaj.org/article/7367d83b66524eb9bd30dd7972fd81fa
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 557-563 (2021)
The dynamic on-resistance increase during power switching is one of the challenges of GaN-based HEMTs (high-electron-mobility transistors) for power electronic applications. Both the surface traps and buffer traps reduce channel carriers, resulting i
Externí odkaz:
https://doaj.org/article/df95df06842e4ff19b9d891c6900f81f
Publikováno v:
Materials, Vol 16, Iss 2, p 582 (2023)
In this study, we propose and simulate the design of a non-regrowth staircase channel GaN vertical trench transistor, demonstrating an exceptional threshold and breakdown characteristic for high power and high frequency applications. The unique stair
Externí odkaz:
https://doaj.org/article/e8914c94f0c94c6ca71362e569400d1b
Autor:
Yung-Tsan Chen, Ya-Chu Lee, Yao-Hsuan Lai, Jin-Chun Lim, Nien-Tsu Huang, Chih-Ting Lin, Jian-Jang Huang
Publikováno v:
Biosensors, Vol 10, Iss 12, p 209 (2020)
This article reviews optical biosensors and their integration with microfluidic channels. The integrated biosensors have the advantages of higher accuracy and sensitivity because they can simultaneously monitor two or more parameters. They can furthe
Externí odkaz:
https://doaj.org/article/05a1f7ef2b794b0c890d343001955f07