Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Jian-Han Huang"'
Publikováno v:
British Journal of Neurosurgery. :1-16
Atypical teratoid/rhabdoid tumor (AT/RT) is well documented in children but less so in adults because of its rarity.We report a series of five cases, a literature review and quantitative analysis of the survival outcome of adult AT/RT patients.Sevent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::705d2579d875ce07e2013fa4ba99d12e
https://doi.org/10.1080/02688697.2021.1885620
https://doi.org/10.1080/02688697.2021.1885620
Publikováno v:
Biochemical Systematics and Ecology. 76:42-45
Seventeen compounds were isolated from the aerial parts of Sheareria nana S. Moore. Their structures were elucidated by spectroscopic methods and by comparison of the reported spectral data. They consisted of two sterols (1 and 12), five triterpenoid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::639ea4d85dba8b718f76b99412f19491
https://doi.org/10.1016/j.bse.2017.12.006
https://doi.org/10.1016/j.bse.2017.12.006
Publikováno v:
Chinese Journal of Chemistry. 26:51-54
The optimized molecular geometries of o-dimethoxybenzene (ODMB) in the S0 state were predicted by ab initio and density functional theory calculations. Its vibrational spectra in the S1 and D0 states were studied by one color resonant two photon ioni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::181c7c2fd14e4a07d316449564eaa651
https://doi.org/10.1002/cjoc.200890037
https://doi.org/10.1002/cjoc.200890037
Autor:
Jyi-Tsong Lin, Jian-Han Huang
Publikováno v:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
In this paper, 71nm multi-gate, cross-gate and multi-fins SOI device be used for 3D CMOS IC were successfully fabricated on a bulk wafer simultaneously rather than on a commercial SOI wafer. The buried oxide of the SOI structure was directly formed b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecffe643eca06e637c5928322cb594d3
https://doi.org/10.1109/icsict.2004.1434967
https://doi.org/10.1109/icsict.2004.1434967
Autor:
Jian-Han Huang, 黃建翰
92
In this thesis, the Cross-Gate SOI MOSFET that has double sources and double drains was successfully fabricated. The new SOI device structure has five unique features. First, it uses mesa isolation instead of using conventional LOCOS and tren
In this thesis, the Cross-Gate SOI MOSFET that has double sources and double drains was successfully fabricated. The new SOI device structure has five unique features. First, it uses mesa isolation instead of using conventional LOCOS and tren
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/99193184395821182506
Autor:
Peng, Ai Jun1 (AUTHOR), Fan, Shu Cai1 (AUTHOR), Chen, Ya Xing1 (AUTHOR), Huang, Jian Han1 (AUTHOR), Cao, Yi1 (AUTHOR), Zhou, Liang Xue1 (AUTHOR) zhlxsch@163.com, Chen, Ni2 (AUTHOR)
Publikováno v:
British Journal of Neurosurgery. Apr2024, Vol. 38 Issue 2, p425-432. 8p.
Autor:
Jyi-Tsong Lin, Jian-Han Huang
Publikováno v:
Proceedings 7th International Conference on Solid-State & Integrated Circuits Technology, 2004; 2004, p117-117, 1p
Autor:
Arshadi, M.1 m-arshadi@ch.iut.ac.ir, Faraji, A.R.2, Moaddeli, A.1, Khalafi-Nezhad, A.1, Firouzabadi, H.1
Publikováno v:
Chemical Engineering Research & Design: Transactions of the Institution of Chemical Engineers Part A. May2016, Vol. 109, p707-719. 13p.
Autor:
Griber, Yulia A., Schindler, Verena M.
Publikováno v:
Color Research & Application; Feb2020, Vol. 45 Issue 1, p183-185, 3p
Publikováno v:
Proceedings 7th International Conference on Solid-State & Integrated Circuits Technology, 2004; 2004, p1-34, 34p