Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Jian-Fa Ciou"'
Autor:
Jian-Fa Ciou, 邱健發
102
In recent study, C doped SiO2 was found as a dielectric layer exhibiting a very good RRAM performance. The resistive switching mechanism of C:SiO2 RRAM are different from the other kinds of metal oxide filament like device switching by oxyge
In recent study, C doped SiO2 was found as a dielectric layer exhibiting a very good RRAM performance. The resistive switching mechanism of C:SiO2 RRAM are different from the other kinds of metal oxide filament like device switching by oxyge
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/r744cu
Autor:
Jin-Cheng Zheng, Jen-Chung Lou, Kai-Huang Chen, Simon M. Sze, Yi-Jiun Chen, Kuan-Chang Chang, Tai-Fa Young, Jung-Hui Chen, Rui Zhang, Jian-Fa Ciou, Tsung-Ming Tsai, Hsin-Lu Chen, Ting-Chang Chang, Tian-Jian Chu
Publikováno v:
IEEE Electron Device Letters. 35:1016-1018
In this letter, one single-layer diamond-like carbon (DLC) resistive random access memory (RRAM) and two opposite stacking double-layer DLC/HfO 2 RRAMs were prepared to investigate the resistance switching mechanism of DLC-based memristors. The RRAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e1cfc726e748c45436a8f4f41750452
https://doi.org/10.1109/led.2014.2343331
https://doi.org/10.1109/led.2014.2343331
