Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Jian-Der Lee"'
Autor:
Kuan-Cheng Chang, I-Chung Chen, Pei-Yung Liao, Chia-Wei Liou, Chi-Hung Huang, Meng-Huan Lei, Jackson Wang, Tung-Chen Yeh, Zhih-Cherng Chen, Yi-Jen Hung, Jian-Der Lee, Kwan-Lih Hsu, Charles Jia-Yin Hou
Publikováno v:
Blood Pressure. 20:13-21
To evaluate the efficacy and safety of valsartan in Taiwanese patients with essential hypertension.This 12-week multi-center, open-label, observational, post-marketing surveillance study enrolled 2046 hypertensive patients who were prescribed valsart
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7655b553734244fc6be0d90d4d7691e
https://doi.org/10.3109/08037051.2011.588458
https://doi.org/10.3109/08037051.2011.588458
Publikováno v:
The Journal of Physical Chemistry C. 113:13151-13159
The clean-off reaction of AgO added rows by CO on Ag(110) and Au/Ag(110) bimetallic surfaces was studied by scanning tunneling microscopy (STM) and compared with density functional theory (DFT). This combined study of a model system illustrated the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::850293b6fceb6ea4a8d9045d53e1f208
https://doi.org/10.1021/jp811238w
https://doi.org/10.1021/jp811238w
Autor:
Rong-Kuo Lyu, Chiung-Mei Chen, Jian-Der Lee, Ying-Chih Huang, Hong-Shiu Chang, Yih-Ru Wu, Long-Sun Ro
Publikováno v:
Muscle & Nerve. 37:576-582
The purpose of this study was to review the clinical manifestations of 40 patients who fulfilled the clinical criteria for Hirayama disease (juvenile muscular atrophy of distal upper extremities), identified in our neuromuscular clinic between Februa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6513fbb9a1a6c0b88dac62528d2db399
https://doi.org/10.1002/mus.20980
https://doi.org/10.1002/mus.20980
Autor:
Tung-Ming Pan, Jian-Der Lee
Publikováno v:
Journal of Electronic Materials. 36:1395-1403
This paper describes the physical properties and electrical characteristics of thin Y2O3 gate oxides grown on silicon substrates through reactive radiofrequency (RF) sputtering. The structural and morphological features of these films were studied us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::716a50bc16bdbf45ebb94ca1ec49a92c
https://doi.org/10.1007/s11664-007-0250-1
https://doi.org/10.1007/s11664-007-0250-1
Publikováno v:
2009 IEEE Symposium on Industrial Electronics & Applications.
In this paper, a gain scheduling perturbation and observation (P&O) algorithm is proposed to realize the dynamic and rapid maximum power point tracking (MPPT) for a grid-connected photovoltaic energy conversion system (PECS). The hardware implementat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a430ab542b02e798651cfcb67a5ec7e
https://doi.org/10.1109/isiea.2009.5356334
https://doi.org/10.1109/isiea.2009.5356334
Autor:
Kuan-Di Wang, Jian-Chi Lin, Chun-Lin Chen, Jer-Chyi Wang, Hui-Hsin Hsu, Tung-Ming Pan, Chao-Sung Lai, Jian-Der Lee
Publikováno v:
2005 International Semiconductor Device Research Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a422ec86fab1578496a9a7a1d7585434
https://doi.org/10.1109/isdrs.2005.1596015
https://doi.org/10.1109/isdrs.2005.1596015
Publikováno v:
Journal of Applied Physics. 101:024110
The structural properties and electrical characteristics of thin Nd2O3 gate oxides were deposited on silicon substrates by reactive rf sputtering. The structural and morphological features of these films were studied, as a function of the growth cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c0d8294e42c5ba45e28b773ff4e2ba1
https://doi.org/10.1063/1.2426937
https://doi.org/10.1063/1.2426937
Autor:
Tung-Ming Pan, Jian-Der Lee
Publikováno v:
Journal of The Electrochemical Society. 154:H698
We report on the physical properties and electrical characteristics of Y 2 O 3 gate oxides grown on silicon substrates with NH 3 plasma treatment by reactive radio-frequency sputtering. The interfacial chemistry of the high-k gate dielectric Y 2 O 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e25e2ef7b078f254899a435e2b0f0b0b
https://doi.org/10.1149/1.2742808
https://doi.org/10.1149/1.2742808
Publikováno v:
Applied Physics Letters. 89:232908
In this letter, the authors reported a high-k neodymium oxide gate dielectric grown by reactive rf sputtering. It is found that the Nd2O3 gate dielectric after annealing at 700°C exhibits excellent electrical properties such as low equivalent oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4975fc7d1b27a91f3ba4828970f7472f
https://doi.org/10.1063/1.2402237
https://doi.org/10.1063/1.2402237