Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jian-Cang Shen"'
Publikováno v:
Physics Letters A. 362:471-475
Vanadium incorporation in SrBi 4 Ti 4 O 15 results in an improvement of electric properties. Raman scattering reveals that V-addition brings about the local disorders of structure, charge, and internal stress. The chemical valence of Bi and Ti does n
Publikováno v:
Integrated Ferroelectrics. 85:49-57
Bi2WO6, the simplest ferroelectric ceramic, with excess Bi2O3of 0.0, 2.0 and 5.0 wt% of the stoichiometric composition have been prepared by the conventional solid-state reaction method. Their microstructure, ferroelectric properties, the concentrati
Publikováno v:
Integrated Ferroelectrics. 85:39-47
An investigation on the ferroelectric and dielectric properties of higher-valent-cations Nb-and Mo-modificated SrBi4Ti4O15 ceramics was presented. The ferroelectric property of SrBi4Ti4O15 was both obviously improved by niobium and molybdenum doping.
Publikováno v:
Journal of Solid State Chemistry. 178:2832-2837
The ferroelectric ceramics of Bi{sub 4}Ti{sub 3}O{sub 12}, SrBi{sub 4}Ti{sub 4}O{sub 15}, and lanthanum-doped Bi{sub 4}Ti{sub 3}O{sub 12}-SrBi{sub 4}Ti{sub 4}O{sub 15} were synthesized, and their Raman spectra were investigated. La-doping resulted in
Publikováno v:
Acta Materialia. 53:3155-3162
The ferroelectric ceramics of lanthanum-doped SrBi4Ti4O15 (SrBi4 − xLaxTi4O15:SBLT-x, x = 0.00, 0.05, 0.10, 0.25, 0.50, 0.75 and 1.00) have been synthesized. Raman and XPS spectrum measurements have been carried out to analyze the La substitution s
Publikováno v:
Materials Letters. 59:1581-1584
The Raman spectra for SrBi 4− x La x Ti 4 O 15 ( x =0.00–1.00) ceramic samples are investigated to explore the influence of doping on the structure of SrBi 4 Ti 4 O 15 . Lanthanum-doping results in the shifts of the Raman modes involved in the vi
Publikováno v:
Applied Physics A: Materials Science & Processing. 77:855-858
A SiO2 nanoscale island array was fabricated on a Si substrate by using anodic porous alumina as a mask. Transmission electron microscopy observation and the atomic force microscopy pattern show that the arrangement of SiO2 islands has a quasi-hexago
Publikováno v:
Physics Letters A. 301:96-100
Ge ions were implanted into a SiO 2 nanoscale islands array at an energy of 200 keV with a dose of 1×10 17 cm −2 . Violet photoluminescence (PL) bands peaked at 370, 396, and 415 nm from Ge + implanted SiO 2 nanoscale islands array were observed,
Publikováno v:
Physics Letters A. 300:307-310
Ge-doped SiO 2 films were deposited on p -Si substrates by magnetron sputtering and metal–insulator–semiconductor (MIS) structures were fabricated with semitransparent Au layers on SiO 2 films. The MIS structures exhibit electroluminescence (EL)
Publikováno v:
Physics Letters A. 273:208-211
Photoluminescence (PL) spectra of Ge–SiO 2 co-sputtered films annealed under O 2 , N 2 , and air were examined using the 250 nm excitation line of Xe lamp. Violet and ultraviolet PL peaks were observed at ∼400 and ∼300 nm. The two peaks were fo