Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures

Autor: Jian Yin Qin, Xiufeng Han, Jean-Georges Mussot, Xavier Devaux, Henri Jaffrès, Piotr Łaczkowski, Sébastien Petit-Watelot, Zhi Liu, Stéphane Mangin, Yuan Lu, Huong Dang, Bu Wen Cheng, Abdelmadjid Anane, Juan-Carlos Rojas-Sánchez, J.-M. George, Jean-Christophe Le Breton, Abdelhak Djeffal, S. Suire, Carolina Cerqueira, Philippe Schieffer, Mathieu Stoffel, Michel Hehn, Sylvie Migot

Publikováno v: Nano Letters
Nano Letters, 2019, 19 (1), pp.90-99. ⟨10.1021/acs.nanolett.8b03386⟩
Nano Letters, American Chemical Society, 2019, 19 (1), pp.90-99. ⟨10.1021/acs.nanolett.8b03386⟩

International audience; Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bondin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28ba6f184b9afde3157e7a864d69fe0f
https://univ-rennes.hal.science/hal-01987996