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pro vyhledávání: '"Jian Xuan Xu"'
Autor:
Chien Hua Yu, Chu An Chiu, Chang Luen Wu, Tsu Yi Wu, Yeong-Her Wang, Jian Xuan Xu, Po Wen Sze, Chih Chun Hu
Publikováno v:
Vacuum. 118:142-146
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with a liquid phase deposited (LPD) ZrO2 thin film as gate insulator was fabricated. Compared with the conventional HEMT, the maximum drain current increases from 492 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82a82f4a28f603e0956254fe828c8058
https://doi.org/10.1016/j.vacuum.2015.01.012
https://doi.org/10.1016/j.vacuum.2015.01.012
