Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jian Long Ruan"'
Publikováno v:
Ceramics International. 48:8766-8772
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eda82d9cedf305672502d6cabcf75db
https://doi.org/10.1016/j.ceramint.2022.01.131
https://doi.org/10.1016/j.ceramint.2022.01.131
Publikováno v:
ECS Meeting Abstracts. :1046-1046
In this study, we demonstrate breaking through the main obstacle to achieve perfect wafer bonding: the requirement of the surface needs to be very flat and smooth. Strictly, the roughness must be less than 0.5 Å. We use sintered aluminum nitride as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff2fcd4f399ac16bb266931254f9c8e6
https://doi.org/10.1149/ma2022-01181046mtgabs
https://doi.org/10.1149/ma2022-01181046mtgabs
Autor:
Jian Ting Lai, Zi Hao Wang, Chih Yi Liu, Jian Long Ruan, Yan-Kuin Su, Ricky W. Chuang, Shen Po Chang, Shyh-Jer Huang, Cheng Chung Lin
Publikováno v:
Nanoscience and Nanotechnology Letters. 9:1487-1490
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e72282c34f2ef0acfcd1a0b832143f
https://doi.org/10.1166/nnl.2017.2405
https://doi.org/10.1166/nnl.2017.2405
Autor:
Chang-An Wang, Horng Hwa Lu, Jian Long Ruan, Pramoda K. Nayak, Sajalik Pavol, Takashi Goto, Jow-Lay Huang, Rong Tu, Qing Yu Chen, Ching Huan Lee, Jian Horn Chen, Hao Chih Liu
Publikováno v:
Journal of the American Ceramic Society. 95:1421-1428
The effects of microstructure on the mechanical responses and damage evolution of spark-plasma-sintered β-Si3N4-based ceramics has been evaluated through indentation tests. It was found that the nanoceramic and its coarse-grained counterpart exhibit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c3d1c05d188b6f4d266e76e6c003fe
https://doi.org/10.1111/j.1551-2916.2012.05080.x
https://doi.org/10.1111/j.1551-2916.2012.05080.x
Publikováno v:
Thin Solid Films. 519:4987-4991
The Ta x Zr 1−x N films were prepared by reactive magnetron sputtering and the concentration of zirconium and tantalum was regulated by controlling the power to the sputtering guns. The effects of the Ta content on the microstructure, composition a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19fefac33362beccb5df724671716d5d
https://doi.org/10.1016/j.tsf.2011.01.066
https://doi.org/10.1016/j.tsf.2011.01.066
Publikováno v:
Ceramics International. 35:1999-2005
ZrN diffusion barrier films were prepared by DC reactive magnetron sputtering under different negative substrate bias. The composition, microstructure, resistivity and diffusion barrier properties of ZrN films, with respect to substrate bias, were st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6692c7e9e27c2b9d3312abb5a22ac582
https://doi.org/10.1016/j.ceramint.2008.11.002
https://doi.org/10.1016/j.ceramint.2008.11.002
Publikováno v:
Journal of Alloys and Compounds. 478:671-675
The effects of nitrogen flow rate on the microstructure, composition and electrical properties of ZrN x films prepared by reactive sputtering were investigated by X-ray diffraction, field-emission electron probe micro-analyzer, transmission electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4d92bfcbf85f3eebb3fc7a8a935d7c6
https://doi.org/10.1016/j.jallcom.2008.11.103
https://doi.org/10.1016/j.jallcom.2008.11.103
Publikováno v:
Surface and Coatings Technology. 200:1652-1658
Zirconium aluminum nitride (Zr–Al–N) diffusion barrier films were deposited on Si substrates by DC-reactive magnetron sputtering under different substrate bias voltages. Cu films were subsequently sputtered onto the Zr–Al–N films without brea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a3e965860eee319ff599f8efc1e456e
https://doi.org/10.1016/j.surfcoat.2005.08.106
https://doi.org/10.1016/j.surfcoat.2005.08.106
Autor:
Jian-Long Ruan, 阮建龍
92
As semiconductor device technology approached the deep sub-micron process requirements, copper has replaced aluminum in the interconnect metallization due to its good electrical conductivity and excellent resistance of electromigration. Howev
As semiconductor device technology approached the deep sub-micron process requirements, copper has replaced aluminum in the interconnect metallization due to its good electrical conductivity and excellent resistance of electromigration. Howev
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/99798413904407583227
Publikováno v:
Proceedings of SPIE; 4/18/2017, Vol. 10251, p1-3, 3p