Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Jian Kai Liou"'
Autor:
Jung-Hui Tsai, Yi-Chun Chan, Wei-Cheng Chen, Chun Yen Chen, Wen-Chau Liu, Ching-Hong Chang, Jian-Kai Liou
Publikováno v:
IEEE Transactions on Electron Devices. 64:2854-2858
The Characteristics of GaN-based LEDs with hybrid microhole arrays and SiO2 microspheres (MSs)/ nanoparticles (NPs) are comprehensively studied. The SiO2 MSs/NPs antireflection coating, deposited by a rapid convection deposition, acts as a passivatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2068a4eec5c18b5b632bbdc6f2ca9e2
https://doi.org/10.1109/ted.2017.2702651
https://doi.org/10.1109/ted.2017.2702651
Autor:
Chi-Shiang Hsu, Wen-Chau Liu, Wei-Cheng Chen, Jian-Kai Liou, Der-Feng Guo, Shiou-Ying Cheng, Sheng-Yi Chen, Chun Yen Chen, Ching-Hong Chang
Publikováno v:
IEEE Transactions on Electron Devices. 64:2542-2548
Characteristics of GaN-based light-emitting diodes (LEDs) with 1-D stripe (B-series) and 2-D grid (A-series) Ag metal line patterns are comprehensively studied and reported. Due to the enhanced current spreading capability, as compared to a conventio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::969f322ee65c3ee65625159701b30339
https://doi.org/10.1109/ted.2017.2691411
https://doi.org/10.1109/ted.2017.2691411
Publikováno v:
Solid-State Electronics. 132:86-90
The effect of employing different carrier gases (H2 only and 1:1 vol% N2:H2) in the p-type GaN (p-GaN) layer on the wall-plug efficiency (WPE) of high-power light-emitting diodes (LEDs) is studied. Since GaN crystal could be a two-dimension (2-D) gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ff06cffd5e113cec0f98aab57b42ff7
https://doi.org/10.1016/j.sse.2017.03.012
https://doi.org/10.1016/j.sse.2017.03.012
Autor:
Shiou-Ying Cheng, Wei-Cheng Chen, Ching-Hong Chang, Der-Feng Guo, Yi-Chun Chan, Chi-Hsiang Hsu, Wen-Chau Liu, Jian-Kai Liou
Publikováno v:
IEEE Transactions on Electron Devices. 64:1134-1139
A hybrid SiO2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::542584441515a20daecc3c645c2a7135
https://doi.org/10.1109/ted.2017.2657659
https://doi.org/10.1109/ted.2017.2657659
Publikováno v:
IEEE Transactions on Electron Devices. 62:3296-3301
A high-power GaN-based light-emitting diode (LED) with an inductively coupled plasma (ICP)-transferred nanohemispherical hybrid backside reflector is studied. A self-assembled 100 ± 5 nm SiO2 nanosphere monolayer is drop-coated on the backside of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::150e73c3238ab2922e6bffbc72f65943
https://doi.org/10.1109/ted.2015.2462088
https://doi.org/10.1109/ted.2015.2462088
Autor:
Wei-Cheng Chen, Cheng-Jing Lai, Po-Cheng Chou, Huey-Ing Chen, Chun-Chia Chen, I-Ping Liu, Jian-Kai Liou, Wen-Chau Liu
Publikováno v:
International Journal of Hydrogen Energy. 40:9006-9012
A new Pd/AlGaN/GaN Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures is fabricated and studied comprehensively. The employed pyramid-like Pd nanostructures cause the substantial increase of surface roughness and surface-to-volum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5366ea5e5954d5c6bb078253a2c6da18
https://doi.org/10.1016/j.ijhydene.2015.05.036
https://doi.org/10.1016/j.ijhydene.2015.05.036
Autor:
Jian-Kai Liou, Wen-Chau Liu, Chun-Chia Chen, Po-Cheng Chou, Huey-Ing Chen, I-Ping Liu, Cheng-Jing Lai
Publikováno v:
IEEE Sensors Journal. 15:3759-3763
The interesting ZnO nanoparticles (NPs)-based sensor devices are fabricated on sapphire substrates to study the nitrogen oxide (NO2) gas sensing performance. The postheat treatment process is not used to avoid the undesired agglomeration phenomenon.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cd11e77e1ed915a07680cf9064917f1
https://doi.org/10.1109/jsen.2015.2391271
https://doi.org/10.1109/jsen.2015.2391271
Autor:
Po-Cheng Chou, Huey-Ing Chen, I-Ping Liu, Kai-Siang Hsu, Chun-Chia Chen, Wen-Chau Liu, Jian-Kai Liou
Publikováno v:
IEEE Sensors Journal. 15:3711-3715
An interesting ammonia gas sensor based on a p-type NiO thin film, prepared by a radio frequency sputtering process, is studied and demonstrated. As compared with conventional n-type metal-oxide sensors, the studied device shows comparable and good s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::604ad80fd6b6d601340f4fc05744ffbc
https://doi.org/10.1109/jsen.2015.2391286
https://doi.org/10.1109/jsen.2015.2391286
Autor:
Yu Ting Tsai, I-Ping Liu, Po-Cheng Chou, Huey-Ing Chen, Wen-Chau Liu, Jian-Kai Liou, Chun-Chia Chen
Publikováno v:
Applied Surface Science. 341:120-126
A Pt/AlGaAs/InGaAs/GaAs heterostructure field-effect transistor (HFET), prepared by an electrophoretic deposition (EPD) approach on gate Schottky contact region, is fabricated and studied. The EPD-based Pt-gates with three different molar ratios (ω0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68c9c595dc48e4600ceaf49bd6086daf
https://doi.org/10.1016/j.apsusc.2015.03.016
https://doi.org/10.1016/j.apsusc.2015.03.016
Autor:
Hao-Yeh Liu, I-Ping Liu, Chun-Chia Chen, Wen-Chau Liu, Po-Cheng Chou, Huey-Ing Chen, Jian-Kai Liou
Publikováno v:
Sensors and Actuators B: Chemical. 211:303-309
In this work, enhanced hydrogen sensing characteristics of a GaN-based Schottky diode-type sensor with a GaOx layer are studied and demonstrated. A thin GaOx layer inserted in Pd/GaN interface is oxidized by the immersion in an H2O2 solution at room
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb5105d8a48a70d92e3a965b183e30d5
https://doi.org/10.1016/j.snb.2015.01.099
https://doi.org/10.1016/j.snb.2015.01.099