Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Jiamang Che"'
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 5, Pp 1-5 (2021)
We experimentally and numerically propose a deep ultraviolet light-emitting diode (DUV LED) possessing the quantum barriers (QBs) with the gradually reduced Al composition along the [0001] orientation. The induced negative polarization bulk charges i
Externí odkaz:
https://doaj.org/article/c39770c2963445e58a992a149acea05b
Autor:
Chunshuang Chu, Kangkai Tian, Jiamang Che, Hua Shao, Jianquan Kou, Yonghui Zhang, Zi-Hui Zhang, Hao-Chung Kuo
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 3, Pp 1-7 (2020)
In this work, we have investigated the origin of efficiency droop for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be caused by the electron leakage for DUV LEDs studied in this work. T
Externí odkaz:
https://doaj.org/article/5146774df45c4eae98fb8d0f98ad9883
Autor:
Jiamang Che, Hua Shao, Jianquan Kou, Kangkai Tian, Chunshuang Chu, Xu Hou, Yonghui Zhang, Qian Sun, Zi-Hui Zhang
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-16 (2019)
Abstract In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a
Externí odkaz:
https://doaj.org/article/8e3156899e5449d19ac3334f303ce536
Autor:
Jiamang Che, Chunshuang Chu, Kangkai Tian, Jianquan Kou, Hua Shao, Yonghui Zhang, Wengang Bi, Zi-Hui Zhang
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-14 (2018)
Abstract In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated. According to our results, the adopted
Externí odkaz:
https://doaj.org/article/126052d963d7490284f05755c9bef8b8
Publikováno v:
IEEE Photonics Technology Letters. 34:1065-1068
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e53331f31a6bfadf9e92d5e58b3f36d0
https://doi.org/10.1109/lpt.2022.3200460
https://doi.org/10.1109/lpt.2022.3200460
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 5, Pp 1-5 (2021)
We experimentally and numerically propose a deep ultraviolet light-emitting diode (DUV LED) possessing the quantum barriers (QBs) with the gradually reduced Al composition along the [0001] orientation. The induced negative polarization bulk charges i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15ed39e9736f79ab5baa8ef1cc303afe
https://ieeexplore.ieee.org/document/9547681/
https://ieeexplore.ieee.org/document/9547681/
Autor:
Wengang Bi, Zi-Hui Zhang, Chunshuang Chu, Yonghui Zhang, Jiamang Che, Kangkai Tian, Jianquan Kou, Hua Shao
Publikováno v:
IEEE Transactions on Electron Devices. 67:3548-3552
In this work, and experimentally propose inserting an SiO2 intermediate layer between the Ti and n-AlGaN layer to improve the electron injection efficiency. When the SiO2 intermediate layer is adopted, the SiO2 layer can share a part of the applied v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef84f8d569f8511d292071097aaa6d8b
https://doi.org/10.1109/ted.2020.3007363
https://doi.org/10.1109/ted.2020.3007363
Autor:
Jianquan Kou, Kangkai Tian, Chunshuang Chu, Hua Shao, Zi-Hui Zhang, Hao-Chung Kuo, Yonghui Zhang, Jiamang Che
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 3, Pp 1-7 (2020)
In this work, we have investigated the origin of efficiency droop for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be caused by the electron leakage for DUV LEDs studied in this work. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f50950fa36c40599378239e02d040440
https://doi.org/10.1109/jphot.2020.2997343
https://doi.org/10.1109/jphot.2020.2997343
Autor:
Jiaxing Wang, Jiamang Che, Dabing Li, Zi-Hui Zhang, Sun Xiaojuan, Chunshuang Chu, Hua Shao, Yonghui Zhang
Publikováno v:
Applied optics. 60(35)
Traditional GaN-based metal-semiconductor-metal (MSM) photodetector (PD) features a symmetric structure, and thus a poor lateral carrier transport can be encountered, which can decrease the photocurrent and responsivity. To improve its photoelectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e3ac80b0cd33b308e0cedb8b005cc88
https://pubmed.ncbi.nlm.nih.gov/35200860
https://pubmed.ncbi.nlm.nih.gov/35200860
Autor:
Jiamang, Che, Hua, Shao, Chunshuang, Chu, Qingqing, Li, Yonghui, Zhang, Xiaowei, Sun, Zi-Hui, Zhang
Publikováno v:
Optics letters. 47(4)
In this work, a 280-nm-wavelength deep-ultraviolet light-emitting diode (DUV LED) with a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::6dc11bcf8a86cae25fb8ba3ab8dd4f46
https://pubmed.ncbi.nlm.nih.gov/35167528
https://pubmed.ncbi.nlm.nih.gov/35167528