Zobrazeno 1 - 10
of 113
pro vyhledávání: '"Jiale Su"'
Autor:
Henry H. Radamson, Yuanhao Miao, Ziwei Zhou, Zhenhua Wu, Zhenzhen Kong, Jianfeng Gao, Hong Yang, Yuhui Ren, Yongkui Zhang, Jiangliu Shi, Jinjuan Xiang, Hushan Cui, Bin Lu, Junjie Li, Jinbiao Liu, Hongxiao Lin, Haoqing Xu, Mengfan Li, Jiaji Cao, Chuangqi He, Xiangyan Duan, Xuewei Zhao, Jiale Su, Yong Du, Jiahan Yu, Yuanyuan Wu, Miao Jiang, Di Liang, Ben Li, Yan Dong, Guilei Wang
Publikováno v:
Nanomaterials, Vol 14, Iss 10, p 837 (2024)
After more than five decades, Moore’s Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly unkno
Externí odkaz:
https://doaj.org/article/4ec18820053d48f8b361b57d88c68aa2
Autor:
Pengyan Luan, Zhenxin Yang, Zheng Liang, Xiaoliang Li, Nan Chen, Fushun Li, Xuanhe Li, Jiale Su, Zheng-Hong Lu, Qiang Zhu
Publikováno v:
APL Materials, Vol 12, Iss 1, Pp 011117-011117-8 (2024)
Zeolitic imidazolate framework-8 (ZIF-8) is a versatile candidate for next-generation electronics owing to its adjustable lattice and physicochemical properties. However, the utilization of ZIF-8 for the fabrication of solid-state electronics and cir
Externí odkaz:
https://doaj.org/article/64c54a12e6ee4b3fbd7095e2d843110a
Autor:
Huimin Zhou, Lisi He, Xiaoqing Liu, Gaoling Shi, Xiaobo Sun, Jiale Su, Chang Li, Junhui Chen, Lukas van Zwieten, Genxing Pan
Publikováno v:
Geoderma, Vol 438, Iss , Pp 116628- (2023)
Excessive chemical fertilization in protected horticulture has caused nutrient accumulation, reduction of soil biodiversity, and subsequently soil degradation. Pyroligneous vinegar is a byproduct of pyrolysis for biochar production. While there has b
Externí odkaz:
https://doaj.org/article/7c485d18fcc346ef96ddde899ef07627
Publikováno v:
Advanced Photonics Research, Vol 3, Iss 11, Pp n/a-n/a (2022)
Optogenetic technology is to express the channel proteins that can be act on light for realizing the activity of neurons activated and inhibited. Here, inspired by optogenetics, a flexible side‐gate artificial synaptic transistor based on ion gel a
Externí odkaz:
https://doaj.org/article/91796e2fe5e34b05a2b0efdca3dd01de
Publikováno v:
Plants, Vol 12, Iss 5, p 994 (2023)
The AP2/ERF gene family is one of the most conserved and important transcription factor families mainly occurring in plants with various functions in regulating plant biological and physiological processes. However, little comprehensive research has
Externí odkaz:
https://doaj.org/article/38659cd71a5847aeb9fe8de0794a20fb
Autor:
Yuanhao Miao, Hongxiao Lin, Ben Li, Tianyu Dong, Chuangqi He, Junhao Du, Xuewei Zhao, Ziwei Zhou, Jiale Su, He Wang, Yan Dong, Bin Lu, Linpeng Dong, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 13, Iss 3, p 606 (2023)
Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising fo
Externí odkaz:
https://doaj.org/article/dd0e15541ba34154bf07e1ad6be6565f
Autor:
Yong Du, Wenqi Wei, Buqing Xu, Guilei Wang, Ben Li, Yuanhao Miao, Xuewei Zhao, Zhenzhen Kong, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Wenwu Wang, Tianchun Ye, Jianjun Zhang, Henry H. Radamson
Publikováno v:
Micromachines, Vol 13, Iss 10, p 1579 (2022)
The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate,
Externí odkaz:
https://doaj.org/article/174102d112a741b28c7308bbd43ec1be
Autor:
Buqing Xu, Guilei Wang, Yong Du, Yuanhao Miao, Ben Li, Xuewei Zhao, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Tianchun Ye, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 12, Iss 15, p 2704 (2022)
The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer
Externí odkaz:
https://doaj.org/article/bff3db07284140e9b0b8ee73eea59212
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 7-12 (2019)
The 4.2% mismatch at the Si/Ge interface has a significant impact on Si/Ge photodetectors. However, few researchers have attempted to determine the major noise source or study the effects of the Si/Ge interface on the dark current, the responsivity a
Externí odkaz:
https://doaj.org/article/624ff8a7b97f4046a11f187048505de0
Autor:
Buqing Xu, Yong Du, Guilei Wang, Wenjuan Xiong, Zhenzhen Kong, Xuewei Zhao, Yuanhao Miao, Yijie Wang, Hongxiao Lin, Jiale Su, Ben Li, Yuanyuan Wu, Henry H. Radamson
Publikováno v:
Materials, Vol 15, Iss 10, p 3594 (2022)
In this manuscript, a novel dual-step selective epitaxy growth (SEG) of Ge was proposed to significantly decrease the defect density and to create fully strained relaxed Ge on a Si substrate. With the single-step SEG of Ge, the threading defect densi
Externí odkaz:
https://doaj.org/article/80d90ff530c541cd8ef55c4ea41b50b6