Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Jiahan Yu"'
Autor:
Henry H. Radamson, Yuanhao Miao, Ziwei Zhou, Zhenhua Wu, Zhenzhen Kong, Jianfeng Gao, Hong Yang, Yuhui Ren, Yongkui Zhang, Jiangliu Shi, Jinjuan Xiang, Hushan Cui, Bin Lu, Junjie Li, Jinbiao Liu, Hongxiao Lin, Haoqing Xu, Mengfan Li, Jiaji Cao, Chuangqi He, Xiangyan Duan, Xuewei Zhao, Jiale Su, Yong Du, Jiahan Yu, Yuanyuan Wu, Miao Jiang, Di Liang, Ben Li, Yan Dong, Guilei Wang
Publikováno v:
Nanomaterials, Vol 14, Iss 10, p 837 (2024)
After more than five decades, Moore’s Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly unkno
Externí odkaz:
https://doaj.org/article/4ec18820053d48f8b361b57d88c68aa2
Publikováno v:
European Journal of Cancer Prevention; Sep2024, Vol. 33 Issue 5, p448-460, 13p
Autor:
Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng
Publikováno v:
Nanomaterials, Vol 13, Iss 12, p 1867 (2023)
At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges. At the same time, the development of vertical devices
Externí odkaz:
https://doaj.org/article/94b5062252864711b56688868cb09bee
Autor:
Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng
Publikováno v:
Nanomaterials, Vol 13, Iss 11, p 1786 (2023)
Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical challenges
Externí odkaz:
https://doaj.org/article/c4259ceaf8894f1db0a706cb9a310538
Autor:
Yong Du, Wenqi Wei, Buqing Xu, Guilei Wang, Ben Li, Yuanhao Miao, Xuewei Zhao, Zhenzhen Kong, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Wenwu Wang, Tianchun Ye, Jianjun Zhang, Henry H. Radamson
Publikováno v:
Micromachines, Vol 13, Iss 10, p 1579 (2022)
The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate,
Externí odkaz:
https://doaj.org/article/174102d112a741b28c7308bbd43ec1be
Autor:
Yu Pan, Huaxiang Yin, Kailiang Huang, Zhaohao Zhang, Qingzhu Zhang, Kunpeng Jia, Zhenhua Wu, Kun Luo, Jiahan Yu, Junfeng Li, Wenwu Wang, Tianchun Ye
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 483-488 (2019)
To allow the use of molybdenum disulfide (MoS2) in mainstream Si CMOS manufacturing processes for improved future scaling, a novel MoS2 transistor with a 10-nm physical gate length created using a p-type doped Si fin as the back-gate electrode is pre
Externí odkaz:
https://doaj.org/article/af22f27b75b44b9483f96c4f5f899550
Autor:
Buqing Xu, Guilei Wang, Yong Du, Yuanhao Miao, Ben Li, Xuewei Zhao, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Tianchun Ye, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 12, Iss 15, p 2704 (2022)
The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer
Externí odkaz:
https://doaj.org/article/bff3db07284140e9b0b8ee73eea59212
Autor:
Buqing Xu, Guilei Wang, Yong Du, Yuanhao Miao, Yuanyuan Wu, Zhenzhen Kong, Jiale Su, Ben Li, Jiahan Yu, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 12, Iss 9, p 1403 (2022)
In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a cha
Externí odkaz:
https://doaj.org/article/6e003f0339c148d09086774c0e86a84c
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 72:1-10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40af3b3644a92ac7331ca616ed94ecd3
https://doi.org/10.1109/tim.2022.3232177
https://doi.org/10.1109/tim.2022.3232177
Autor:
Jiaxin Yao, Jun Li, Kun Luo, Jiahan Yu, Qingzhu Zhang, Zhaozhao Hou, Jie Gu, Wen Yang, Zhenhua Wu, Huaxiang Yin, Wenwu Wang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 841-848 (2018)
We present a comprehensive theoretical investigation of the quantum confinement limited mobility in the Si1-xGex-channel gate-all-around nanosheet field effect transistor for 5-nm node. The study encompasses physics-based quantum mechanical models bo
Externí odkaz:
https://doaj.org/article/512ca449303a4b0bb30d21ee05527535