Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Jiacheng Lei"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-17 (2024)
Abstract This study uses a 2D high-resolution thermo-mechanical coupled model to investigate the dynamic processes of deep plate hydration, dehydration, and subsequent magmatic activity in ocean-continent subduction zones. We reveal the pathways and
Externí odkaz:
https://doaj.org/article/d12be5f85ac94115b31213fb4fe5d769
Publikováno v:
In Journal of Chromatography A 19 July 2024 1727
Publikováno v:
IEEE Transactions on Industrial Electronics. 67:10284-10294
Systematic characterizations of a cascode device with a low-voltage enhance-mode (E-mode) p -GaN gate high-electron mobility transistor as the control device and a high-voltage (HV) depletion-mode (D-mode) silicon carbide junction field effect transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec043881beca19dfce19a5a8ed6168b1
https://doi.org/10.1109/tie.2019.2959512
https://doi.org/10.1109/tie.2019.2959512
Autor:
Peng Huang, Kevin J. Chen, Bo Zhang, Chunhua Zhou, Qi Zhou, Liyang Zhu, Xiu Yang, Zhihua Luo, Jiacheng Lei, Kuangli Chen
Publikováno v:
IEEE Transactions on Electron Devices. 67:4136-4140
In this article, an ultrathin-barrier (UTB) AlGaN/GaN diode featuring metal–insulator–semiconductor (MIS)-gated hybrid anode (MG-HAD) and in situ Si3N4 cap passivation is demonstrated. The intrinsic turn-on voltage ( ${V}_{\mathrm{ON}}$ ) as low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc3169de6e4cec1e1e259be3712bcca6
https://doi.org/10.1109/ted.2020.3018416
https://doi.org/10.1109/ted.2020.3018416
Autor:
Mengyuan Hua, Qingkai Qian, Jiacheng Lei, Song Yang, Zheyang Zheng, Jin Wei, Wenjie Song, Kevin J. Chen, Li Zhang
Publikováno v:
IEEE Electron Device Letters. 41:1304-1307
When the gated channel region of a GaN high-electron-mobility transistor (HEMT) is configured into multiple sub-channels in parallel and separated by embedded isolating patterns, the effective resistance of the access regions could be reduced, and co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d5c26ec8f9ad826edadf12ab644d432
https://doi.org/10.1109/led.2020.3010810
https://doi.org/10.1109/led.2020.3010810
Publikováno v:
IEEE Transactions on Electron Devices. 66:3789-3794
In this paper, systematic characterization and the corresponding suppression strategies of dynamic OFF-state leakage current ( ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) in Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs) are prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::899de925cc46c5999bf7f43c4c054c43
https://doi.org/10.1109/ted.2019.2930315
https://doi.org/10.1109/ted.2019.2930315
Autor:
Zhaofu Zhang, Zheyang Zheng, Jiacheng Lei, Jin Wei, Gaofei Tang, Qingkai Qian, Kevin J. Chen, Kailun Zhong
Publikováno v:
npj 2D Materials and Applications, Vol 3, Iss 1, Pp 1-9 (2019)
Various 2D/3D heterostructures can be created by harnessing the advantages of both the layered two-dimensional semiconductors and bulk materials. A semiconducting gate field-effect transistor (SG-FET) structure based on 2D/3D heterostructures is prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8cf3081e4205d19de0d1f47d6ebbc10
http://link.springer.com/article/10.1038/s41699-019-0106-6
http://link.springer.com/article/10.1038/s41699-019-0106-6
Autor:
Jiacheng Lei, Zheyang Zheng, Zhaofu Zhang, Qingkai Qian, Kevin J. Chen, Gaofei Tang, Mengyuan Hua, Jin Wei
Publikováno v:
IEEE Transactions on Electron Devices. 66:2106-2112
Low-loss reverse-conducting normally- OFF double-channel AlGaN/GaN power transistor with the built-in Schottky barrier diode (SBD) has been systematically studied. This device features the MOS-gate section and SBD-anode section paralleled to an inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd993b9fa3be4a599ae89443e126d6ed
https://doi.org/10.1109/ted.2019.2904038
https://doi.org/10.1109/ted.2019.2904038
Autor:
Liyang Zhu, Kevin J. Chen, Qi Zhou, Xiu Yang, Bo Zhang, Jiacheng Lei, Kuangli Chen, Zhihua Luo, Chunhua Zhou
Publikováno v:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
In this work, a novel MIS-gated hybrid anode diode (MG-HAD) based on ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is demonstrated to exhibit a superior reverse blocking characteristic. An ultra-low reverse leakage of ~1.1 × 10−7 A/mm observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a8d7f6e6a3c8b37be366f711ae66bea
https://doi.org/10.1109/icsict49897.2020.9278128
https://doi.org/10.1109/icsict49897.2020.9278128
