Zobrazeno 1 - 10 of 24 pro vyhledávání: '"Jiaan Zhou"'
1
Akademický článek
High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology
Autor: Bohan Guo, Guohao Yu, Li Zhang, Jiaan Zhou, Zheming Wang, Runxian Xing, An Yang, Yu Li, Bosen Liu, Xiaohong Zeng, Zhongkai Du, Xuguang Deng, Zhongming Zeng, Baoshun Zhang
Publikováno v: Crystals, Vol 14, Iss 3, p 253 (2024)
This article presents the utilization of the chemical–mechanical polishing (CMP) method to fabricate high-performance N-polar GaN/AlGaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) through layer transfer technolo
Externí odkaz: https://doaj.org/article/fb64bbf0298a4e41a436f7b7124cc3df
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2
Akademický článek
Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K
Autor: An Yang, Xing Wei, Wenchao Shen, Yu Hu, Tiwei Chen, Heng Wang, Jiaan Zhou, Runxian Xing, Xiaodong Zhang, Guohao Yu, Yaming Fan, Yong Cai, Zhongming Zeng, Baoshun Zhang
Publikováno v: Crystals, Vol 13, Iss 4, p 620 (2023)
A high-performance temperature sensor based on a p-GaN/AlGaN/GaN hybrid anode diode (HPT-HAD) fabricated by hydrogen plasma treatment is demonstrated. The sensor exhibits accurate and stable temperature responses from 73 to 573 K. The forward anode v
Externí odkaz: https://doaj.org/article/999c192057d146be94f45928d62fd370
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3
Akademický článek
Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching
Autor: Yu Li, Guohao Yu, Heng Wang, Jiaan Zhou, Zheming Wang, Runxian Xing, Shaoqian Lu, An Yang, Bingliang Zhang, Yong Cai, Zhongming Zeng, Baoshun Zhang
Publikováno v: Applied Physics Express, Vol 17, Iss 1, p 011004 (2023)
The effect of tetramethylammonium hydroxide (TMAH) treatment prior to gate dielectric deposition on the performance of recessed-gate AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) was investigated. Through the
Externí odkaz: https://doaj.org/article/f0a77c561ce24be281e882fda4a12b9c
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8
Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs
Autor: Wenxin Tang, Jiaan Zhou, Guohao Yu, Xing Wei, Wenbo Tang, Li Zhang, Weining Liu, Tiwei Chen, Zicheng Yu, Heng Wang, Xiaodong Zhang, Wenkui Lin, Zengli Huang, Rong Huang, Yong Cai, Baoshun Zhang
Publikováno v: Applied Physics Express. 15:076502
Vertical GaN trench-gate MOSFETs with ∼130 nm stepped sidewalls in the p-GaN channel layer are studied and two significant influences have been observed compared to the devices with smooth sidewalls. The first effect is the degraded channel mobilit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e49324beb1415d32d1db85ae6b0dd23f
https://doi.org/10.35848/1882-0786/ac727d
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9
Geochemistry and petrogenesis of Late Carboniferous igneous rocks from southern Mongolia: Implications for the post-collisional extension in the southeastern Central Asian Orogenic Belt
Autor: Jiaan Zhou, Chuansheng Hu, Wenbo Li, Cheng Xu, Qiuyue Huang, Zhihua Li
Publikováno v: Journal of Asian Earth Sciences. 144:141-154
Late Carboniferous is a critical period in terms of the tectonic evolution of the Central Asian Orogenic Belt (CAOB). In this study, we report the petrology, geochronology and geochemistry of Late Carboniferous mafic to felsic rocks from southern Mon
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::907d5016dd61119d70e01a5cd3236c21
https://doi.org/10.1016/j.jseaes.2017.01.011
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10
Preparation of highly (111) textured nanotwinned copper by medium-frequency pulsed electrodeposition in an additive-free electrolyte
Autor: Xiaofei Zhan, Jiaan Zhou, Jian Lian, Khuong Trieu, Xiubin Wang, Hongjun Li, Xinping Zhang
Publikováno v: Electrochimica Acta. 365:137391
A simple and novel strategy for fabricating highly (111) textured nanotwinned copper (nt-Cu) by using medium-frequency (10–1000 Hz) pulsed electrodeposition in an ultra-low Cu2+ concentration electrolyte without additives is reported. First, direct
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::41d8a429bb3d6bac524d3c9a22c9fb2d
https://doi.org/10.1016/j.electacta.2020.137391
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