Zobrazeno 1 - 10
of 38
pro vyhledávání: '"JiaChang Liang"'
Autor:
Jiachang, Liang, Lirong, Lian, Shaotian, Liang, Haibo, Zhao, Gao, Shu, Jiwei, Chao, Chao, Yuan, Mingyu, Zhai
Publikováno v:
World Neurosurgery. 159:e91-e102
As an emerging minimally invasive endoscopic technique, unilateral biportal endoscopic spinal surgery (UBESS) has the advantages of flexibility, a wide and clear field of view, and less soft tissue damage. However, the clinical evidence is insufficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a604ddd2da7243db900c182f2109e74
https://doi.org/10.1016/j.wneu.2021.12.005
https://doi.org/10.1016/j.wneu.2021.12.005
Publikováno v:
Optics Express. 31:8375
The integrated optical isolator is an essential building block in photonic integrated chips. However, the performance of on-chip isolators based on the magneto-optic (MO) effect has been limited due to the magnetization requirement of permanent magne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2ad854bb0d9b6f44f1ef770847b2c16
https://doi.org/10.1364/oe.482805
https://doi.org/10.1364/oe.482805
Autor:
Liping Zhang, Lihui Jiang, Chaohui Ji, Jian Zhang, Zhengquan Yang, Cuihua Rong, Xiao-Yun Le, Jiachang Liang, Zhiping Wang, Chengyao Gao
Publikováno v:
Applied Surface Science. 257:6063-6067
The boron-doped diamond film (BDD) grown on tantalum (Ta) substrate as an electrode (BDD/Ta) was prepared by hot filament chemical vapor deposition method. The experimental results demonstrated that our BDD/Ta had high current efficiency, strong abil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eb9d6aa24baaa0bc39b3a6a1f87022f
https://doi.org/10.1016/j.apsusc.2011.01.129
https://doi.org/10.1016/j.apsusc.2011.01.129
Publikováno v:
Science China Physics, Mechanics and Astronomy. 54:809-814
We have investigated the effects of B impurities on the structure and mechanical properties of NiAl intermetallics by using a first-principles pseudopotential total-energy method, based on the density functional theory with a generalized gradient app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ddde0271e6059e2af8eda7b6b4df74
https://doi.org/10.1007/s11433-011-4325-x
https://doi.org/10.1007/s11433-011-4325-x
Autor:
Yifei Chen, Jingping Xin, Liping Zhang, Yue Chen, Lihui Jiang, Peng Zhang, Xiaoyun Le, Xuelan Hu, Jianxing Xu, Zhiping Wang, Yanyan Zhang, Xueyang Zhang, Chaohui Ji, Cuihua Rong, Jiachang Liang, Mingkai Lei
Publikováno v:
Surface Review and Letters. 17:463-468
We prepared gradated nano-transient layers at different interfaces between deposited film and substrates by high-intensity pulsed ion beam (HIPIB) irradiation. The deposited film was ( Al–Si ) alloy and substrates were Ni and Ti , respectively. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71965e8b7e73f7c6b0afe24f9e15c76d
https://doi.org/10.1142/s0218625x10014296
https://doi.org/10.1142/s0218625x10014296
Publikováno v:
Natural Science. :1057-1060
125 μm-breath sensor with high sensitivity and rapid response was prepared by using n-type Si: Au material. Its sensitivity coefficient and time constant were 4 V.sec / L and 38 msec, respec-tively. Its working principle was based on ano- malous res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c880856b45fd6cc5b60dc6a3895b03d
https://doi.org/10.4236/ns.2010.210130
https://doi.org/10.4236/ns.2010.210130
Publikováno v:
Journal of Materials Science. 32:4377-4382
In heteroepitaxial GaAs grown on Si (GaAs/Si) there exist deep levels caused by various charged states of defects because of large lattice misfit and thermal expansion mismatch between GaAs and Si. The temperature- and excitation intensity-dependent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f58d13423afbbccc649296f2b9e056bd
https://doi.org/10.1023/a:1018628008037
https://doi.org/10.1023/a:1018628008037
Publikováno v:
Journal of Applied Physics. 79:7173-7176
Studies on the 0.96 and 0.84 eV photoluminescence (PL) emissions at various temperatures in GaAs epilayers grown on Si with [As]/[Ga]=20–50 by metalorganic chemical vapor deposition were made. In terms of an Arrhenius plot and configurational coord
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b3f85f74dc221593dca3f68ecdcbe1c
https://doi.org/10.1063/1.361489
https://doi.org/10.1063/1.361489
Publikováno v:
Journal of Luminescence. 63:41-46
The 1.17, 0.99 and 0.85 eV photoluminescence emission in Gao.5Ino.5P epilayers grown on GaAs substrates by metal-organic chemical vapor deposition have been observed. Only the 1.17 eV emission depends on the ordered structure of Ga0.5In0.5P. A detail
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18a0f141fa637fadafd1159089f208b8
https://doi.org/10.1016/0022-2313(94)00055-h
https://doi.org/10.1016/0022-2313(94)00055-h
Publikováno v:
2011 International Conference on Electric Information and Control Engineering.
This paper consider the rendezvous of multi-agents with time delay and virtual leader. The objective is to make the entire group move at a desired velocity. The desired velocity is supposed to be a time-varying and smooth function. A delay-independen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee90efa90b049da6d077d24d12d649c3
https://doi.org/10.1109/iceice.2011.5777875
https://doi.org/10.1109/iceice.2011.5777875