Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jia-Sheng Diao"'
Autor:
Yue Shen, Weidong Song, Chong-Zhen Zhang, Lei Yu, Jia-Sheng Diao, Hui Pi, Shuti Li, Yuan-Wen Zhang, Wen-Xiao Hu, Kai Li
Publikováno v:
Journal of Display Technology. 11:677-681
A novel five-period AlGaN/AlGaN multiple quantum wells light-emitting diodes (LEDs) structure with Al content graded AlGaN barriers is designed in order to improve the electrical and optical performance of ultraviolet LEDs (UV-LEDs), and the effects
Autor:
Wen-Xiao Hu, Lei Yu, Jia-Sheng Diao, Chong-Zhen Zhang, Weidong Song, Kai Li, Hui Pi, Shuti Li, Yuan-Wen Zhang, Xingfu Wang, Yue Shen
Publikováno v:
Superlattices and Microstructures. 82:151-157
Deep-ultraviolet light-emitting diodes (DUV-LEDs) with conventional and specifically designed electron blocking layers (EBLs) are numerical investigated with APSYS simulation program. The results show that the internal quantum efficiency (IQE) and li
Autor:
Shuti Li, Dan-Wei Li, Yuan-Wen Zhang, Lei Yu, Jia-Sheng Diao, Xingfu Wang, Xiang-Jing Zhuo, Jun Zhang, Kai Li
Publikováno v:
IEEE Photonics Technology Letters. 27:117-120
A light-emitting diode (LED) structure containing a low-temperature (LT) GaN interlayer between active region and AlGaN electron blocking layer is proposed to improve the performance of InGaN-based green LEDs. The experimental and simulated results s
Autor:
Miao He, Chao Liu, Jun Zhang, Kai Li, Xiang-Jing Zhuo, Shuti Li, Dan-Wei Li, Lei Yu, Jia-Sheng Diao, Yuan-Wen Zhang, Bijun Zhao, Xingfu Wang
Publikováno v:
Journal of Crystal Growth. 407:58-62
High quality crack-free GaN film has been grown on 2 in. n-type Si (1 1 1) substrate without AlN interlayers by metalorganic chemical vapor deposition (MOCVD). By using a two-step-pressure growth technique for the AlN buffer layer, we have obtained c
Autor:
Jia-Sheng Diao, Xingfu Wang, Wei-Li Wang, Jun Zhang, Dan-Wei Li, Xiang-Jing Zhuo, Shuti Li, Yuan-Wen Zhang, Lei Yu, Kai Li
Publikováno v:
Optics Communications. 325:129-133
The advantages of ultra-thin inserting layer (UTL) on the performances of InGaN/GaN-based blue light-emitting diode (LED) are investigated both experimentally and numerically. The fabricated LED with UTL exhibits smaller emission energy shift, lower
Autor:
Wen-Xiao Hu, Hui Pi, Yue Shen, Kai Li, Jia-Sheng Diao, Xingfu Wang, Chong-Zhen Zhang, Lei Yu, Weidong Song, Shuti Li, Yuan-Wen Zhang
Publikováno v:
Chinese Physics B. 24:077801
A theoretical study of polar and semi/non-polar InGaN/GaN light-emitting diodes (LEDs) with different internal surface polarization charges, which can be grown on Si substrates, is conducted by using APSYS software. In comparison with polar structure
Publikováno v:
Acta crystallographica. Section D, Biological crystallography. 53(Pt 5)
Insulin has a concentration of 10(-8)-10(-11) M in the blood which ensures that it circulates and exerts its physiological functions in vivo as a monomer. The crystal structure of monomeric porcine desB1-B2 despentapeptide (B26-B30) insulin (DesB1-2