Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Jia-Nan Wei"'
Publikováno v:
Nuclear Engineering and Technology, Vol 53, Iss 7, Pp 2357-2363 (2021)
Silicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f9e8586491d685902d1ff1dac26e3cf
http://www.sciencedirect.com/science/article/pii/S1738573321000383
http://www.sciencedirect.com/science/article/pii/S1738573321000383
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 938:29-35
This paper presents an investigation into the impact of neutron-induced displacement damage on the single event transient (SET) charge collection in silicon–germanium heterojunction bipolar transistors (SiGe HBT) based on pulsed laser micro-beam ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24b3ba847318185138c315b92ae56872
https://doi.org/10.1016/j.nima.2019.05.098
https://doi.org/10.1016/j.nima.2019.05.098
Publikováno v:
Microelectronics Reliability. 95:28-35
This paper presents an investigation into the impact of substrate contact structure on the heavy ion-induced current transient in silicon‑germanium heterojunction bipolar transistor (SiGe HBT) based on Technology Computer Aided Design (TCAD) simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b737a799a8b00811aaa945151012142c
https://doi.org/10.1016/j.microrel.2019.02.011
https://doi.org/10.1016/j.microrel.2019.02.011
Publikováno v:
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED).
The impact of Ge profile on the TID susceptibility of SiGe HBTs from two manufacturers is investigated based on TCAD simulation. The results indicate that the modulation of potential distribution across the base region by Ge grading has significant i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84b6cb746f25aca248e04bebbac31643
https://doi.org/10.1109/icreed52909.2021.9588725
https://doi.org/10.1109/icreed52909.2021.9588725
Publikováno v:
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED).
AD8561 (Analog Device Inc.) MACRO-SPICE model is used to investigate the coupled effects of multiple photocurrents generated by gamma pulse radiation in its Input and Output modules. Firstly, the test circuit is built to find sensitive devices accord
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c27bd9e43738aeb598de3a22c79c7bb1
https://doi.org/10.1109/icreed52909.2021.9588740
https://doi.org/10.1109/icreed52909.2021.9588740
Autor:
Jia-Nan Wei, Yaxin Guo, Boyang Du, Chaohui He, Weidong Zhang, Kesheng Chen, Yonghong Li, Sterpone Luca, Yang Li, Weitao Yang, Gang Guo, Zhao Haoyu
The 28 nm system-on-chip (SoC) was irradiated by 12 MeV electron at the China Institute of Atomic Energy (CIAE) for the first time. Soft errors in the on-chip memory (OCM), D-Cache, Register and BR...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e170db07bd502c8afbca1ed271e732ef
http://hdl.handle.net/11583/2845803
http://hdl.handle.net/11583/2845803
Publikováno v:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).
The single event effects (SEE) in ferroelectric random access memories (FRAM) are investigated and the error modes are analyzed using heavy ions. Under the irradiation of heavy ions with high linear energy transfer (LET) values, data upsets are domin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bae8af0783acc48b280b94159cb1182
https://doi.org/10.1109/ipfa47161.2019.8984849
https://doi.org/10.1109/ipfa47161.2019.8984849
Publikováno v:
Microelectronics Reliability. 105:113561
Layout and profile adjustments are presented based on TCAD simulation to improve the inverse-mode performances of silicon-germanium heterojunction bipolar transistor (SiGe HBT). Then the single event transient (SET) and total ionizing dose (TID) sens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a24531d92ecf5196fd812139e18c543
https://doi.org/10.1016/j.microrel.2019.113561
https://doi.org/10.1016/j.microrel.2019.113561
Publikováno v:
Microelectronics Reliability. 103:113499
Space-related electronics contain different types of oxide isolations which are the crucial factor resulting in device degradation and failure. Previous studies show that the local oxidation of silicon (LOCOS) isolation Silicon‑germanium heterojunc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efa4462670b9f28d0aeef21e9458c67f
https://doi.org/10.1016/j.microrel.2019.113499
https://doi.org/10.1016/j.microrel.2019.113499
Publikováno v:
Chinese Physics B. 28:076106
This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the single-event transient (SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor (SiGe HBT). The ion-induced curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::709eb3209a3df3f3569a53adf6fb2a41
https://doi.org/10.1088/1674-1056/28/7/076106
https://doi.org/10.1088/1674-1056/28/7/076106