Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Jia-Lin Shieh"'
Publikováno v:
Solid-State Electronics. 43:463-468
The d.c. and microwave characteristics of graded and abrupt junction In 0.32 Al 0.68 As/In 0.33 Ga 0.67 As heterojunction bipolar transistors (HBTs) grown on GaAs were investigated. A step-graded In x Ga 1− x As buffer was employed to effectively s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b3244343313f679144a52a1070c188c
https://doi.org/10.1016/s0038-1101(98)00310-4
https://doi.org/10.1016/s0038-1101(98)00310-4
Publikováno v:
Journal of Applied Physics. 82:210-213
Defects in Si-doped InxAl1−xAs (0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7615704490bc63604b95e56392417ff
https://doi.org/10.1063/1.365799
https://doi.org/10.1063/1.365799
Publikováno v:
IEEE Transactions on Electron Devices. 44:708-714
The quaternary In/sub 0.52/(Al/sub x/Ga/sub 1-x/)/sub 0.48/As compound on InP substrates is an important material for use in optoelectronic and microwave devices. We systematically investigated the electrical properties of quaternary In/sub 0.52/(Al/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::530bb4ecbc4d463e51720fa14eadbf95
https://doi.org/10.1109/16.568030
https://doi.org/10.1109/16.568030
Publikováno v:
Journal of Crystal Growth. :777-781
Self-organized In 0.5 Ga 0.5 As quantum dots have been successfully grown on vicinal GaAs substrates by molecular beam epitaxy. The density of the quantum dots can be changed by nucleating the dots under different As overpressure. Substrate tilt angl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abb792df24c6979e70762fd07a74d975
https://doi.org/10.1016/s0022-0248(96)01034-2
https://doi.org/10.1016/s0022-0248(96)01034-2
Publikováno v:
Journal of Applied Physics. 79:8367-8370
The residual strain, crystallographic tilt, and surface topography of InxGa1−xAs and InxAl1−xAs (0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a42d26ad72ee5071504220bec318c663
https://doi.org/10.1063/1.362555
https://doi.org/10.1063/1.362555
Publikováno v:
IEEE Journal of Quantum Electronics. 32:442-447
The enhancement of electron barrier height by multistack multiquantum barrier structure is simulated using the transfer matrix method. The validity and feasibility of this concept is verified by the experimental results on GaAs-AlAs multistack multiq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b113d7c890fe9854c364b655cb8ef3f
https://doi.org/10.1109/3.485395
https://doi.org/10.1109/3.485395
Publikováno v:
Journal of the Chinese Institute of Engineers. 18:707-712
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7e84c1b3a8b5f4aa90310a912daa1bd
https://doi.org/10.1080/02533839.1995.9677735
https://doi.org/10.1080/02533839.1995.9677735
Publikováno v:
Journal of Applied Physics. 78:442-445
The optical properties of In0.52(AlxGa1−x)0.48As epilayers with various x values were systematically studied using variable angle spectroscopic ellipsometry in the wavelength range of 310–1700 nm. The refractive indexes were determined and could
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eb5c1d28b3c08f31840703520dcf555
https://doi.org/10.1063/1.360624
https://doi.org/10.1063/1.360624
Publikováno v:
Journal of the Chinese Institute of Engineers. 18:445-449
GaAs metal‐semiconductor‐metal photodetectors with AlGaAs cap and buffer layers have been fabricated and studied. It is shown that the trap‐induced effects which result from the GaAs surface trap states can be avoided by adding an AlGaAs cap la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::699b2bf5ad5e1f58828cfdd284f643be
https://doi.org/10.1080/02533839.1995.9677707
https://doi.org/10.1080/02533839.1995.9677707
Characteristics of pseudomorphic AlGaAs/InxGa1−xAs (0≤x≤0.25) doped‐channel field‐effect transistors
Publikováno v:
Journal of Applied Physics. 76:2494-2498
The pseudomorphic properties of doped‐channel field‐effect transistors have been thoroughly investigated based on AlGaAs/InxGa1−xAs (0≤x≤0.25) heterostructures with different In contents. Through various analytical schemes and device charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5c4e5cef84558495bbcc8e2edd8eaa2
https://doi.org/10.1063/1.357608
https://doi.org/10.1063/1.357608