Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Jia-Liang Yen"'
Autor:
Jia-Liang YEN, 顏嘉良
92
Magnesium (Mg) diffusion into unintentionally doped n-type GaN was studied. Both magnesium (Mg) film and Mg3N2 powder diffusion methods have resulted in p-type GaN successfully. The Hall measurement data indicated that the diffused and anneal
Magnesium (Mg) diffusion into unintentionally doped n-type GaN was studied. Both magnesium (Mg) film and Mg3N2 powder diffusion methods have resulted in p-type GaN successfully. The Hall measurement data indicated that the diffused and anneal
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/01945001594551150589
Autor:
Zuhaib Khan, Jin-Wei Shi, Cheng Yi Liu, Hsiao Yun Yeh, Jie Chen Shih, Jinn-Kong Sheu, Yung Hao Chang, Chun Kai Huang, Jia Liang Yen, Ray-Hua Horng
Publikováno v:
Optics letters. 45(17)
In this work, we demonstrate a novel high-power vertical-cavity surface-emitting laser (VCSEL) array with highly single-mode (SM) and single-polarized output performance without significantly increasing the intra-cavity loss and threshold current ( I
Publikováno v:
IEEE Journal of Quantum Electronics. 54:1-6
In this paper, we demonstrate a novel structure for 850- and 940-nm wavelength high-speed vertical-cavity surface-emitting lasers (VCSELs). Extra shallow apertures (~20 nm) are etched on the topmost current spreading (CS) layer of 850- or 940-nm VCSE
Publikováno v:
Journal of Lightwave Technology. 35:3242-3249
The functionality of novel parallel and series high-speed vertical-cavity surface-emitting laser (VCSEL) arrays, which can greatly relax the tradeoff between output power and modulation speed, is demonstrated. Both types of array structure allow impr
Autor:
Jason Jyehong Chen, Xin-Nan Chen, Jia-Liang Yen, Jin-Wei Shi, Kai-Lun Chi, Dan-Hua Hsieh, Ying-Jay Yang, Hao-Chung Kuo
Publikováno v:
IEEE Journal of Quantum Electronics. 52:1-7
In this paper, we study the influence of p-type modulation doping on the dynamic/static performance of high-speed 850-nm VCSELs with highly strained multiple quantum wells. The studied device structure has a 3/ $2~\lambda $ asymmetric cavity design,
Autor:
Jhih-Min Wun, Jin-Wei Shi, I-Cheng Lu, Ying-Jay Yang, Jia-Wei Jiang, Jason Chen, Kai-Lun Chi, Jia-Liang Yen
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 21:470-479
The strong (>20 nm) wavelength detuning technique has been demonstrated to enhance the modulation speed and high-temperature characteristics (at 85 °C), as well as lower the required driving current density performance of oxide-relief 850-nm vertica
Publikováno v:
IEEE Journal of Quantum Electronics. 50:1-8
A single-mode vertical-cavity surface-emitting laser (VCSEL) array at 850 nm with excellent performance in terms of high output power, single-lobe far-field, and narrow divergence angle has been demonstrated. By use of the Zn-diffusion process with p
Autor:
Nikolai N. Ledentsov, Nikolay N. Ledentsov, Chen-Lung Cheng, Zuhaib Khan, Jia-Liang Yen, Jin-Wei Shi
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. :1-1
We demonstrate 940-nm vertical-cavity surface-emitting lasers (VCSELs) with record-high −3 dB electrical-to-optical bandwidths of 40 and 32 GHz under room-temperature and 85 °C operations, respectively. The combination of Zn-diffusion with oxide-r
Autor:
Kai-Lun Chi, Jia-Liang Yen, Shi-Wei Chiu, Jason Jyehong Chen, Wei Lin, Hao-Chung Kuo, Ying-Jay Yang, Xin-Nan Chen, Jin-Wei Shi
Publikováno v:
OFC
By using p-type modulation doping in the highly strained MQWs of high-speed 850 nm VCSELs, significant enhancements in speed, slope efficiency, and maximum power have been simultaneously achieved as compared to those of un-doped references.
Autor:
Hao-Chung Kuo, Ying-Jay Yang, Jia-Wei Jiang, Kai-Lun Chi, I-Cheng Lu, Jia-Liang Yen, Jason Chen, Jin-Wei Shi, Chia-Chien Wei
Publikováno v:
OFC
850nm VCSELs with record-low driving-current-density (8kA/cm2), small resistance (60Ω), wide-bandwidth (26GHz), and small energy-to-data-rate ratio (228fJ/bit, 3.5mA) for >41Gbit/sec error-free transmission over 100 (2) meter OM4 fiber at room-temp