Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jia-Fa CHEN"'
Autor:
Jia-fa Chen, 陳家發
103
Surface passivation and antireflection strongly affect the conversion efficiency of back-contact CMOS photovoltaic devices. Enhanced device performance is obtained by reducing the surface reflection and the minority carrier recombination. In
Surface passivation and antireflection strongly affect the conversion efficiency of back-contact CMOS photovoltaic devices. Enhanced device performance is obtained by reducing the surface reflection and the minority carrier recombination. In
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/69274025247103232399
Autor:
Jing XU, Jing-Yang GAO, Cheng-Cheng LI, Yun-Xia SONG, Chao-Pei DONG, Zhao WANG, Yun-Meng LI, Yi-Fan LUAN, Jia-Fa CHEN, Zi-Jian ZHOU, Jian-Yu WU
Publikováno v:
Acta Agronomica Sinica. 48:851-859
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a83e13d6dfc9cab7a089b31fb716464
https://doi.org/10.3724/sp.j.1006.2022.13013
https://doi.org/10.3724/sp.j.1006.2022.13013
Autor:
Meng-Syuan Cai, Jia-Fa Chen, Hsiu-Wei Su, Poki Chen, Yung-Jr Hung, Chih-Cheng Shih, Po-Chang Jen, Ting-Chang Chang
Publikováno v:
IEEE Journal of Photovoltaics. 8:342-347
In this study, we demonstrate a complementary metal–oxide–semiconductor (CMOS) backside-illuminated photovoltaic (PV) module. Fabrication of the module involves localized substrate removal from a CMOS PV chip, the application of antireflective si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a47c7af009ea5ee5899a435992fdd98
https://doi.org/10.1109/jphotov.2017.2775440
https://doi.org/10.1109/jphotov.2017.2775440
Publikováno v:
IEEE Electron Device Letters. 36:1169-1171
A backside-illuminated deep-n-well-assisted CMOS photovoltaic device with a thinned substrate and an antireflective surface is demonstrated to improve the photocurrent collection efficiency from the low-lifetime bulk. The deep-n-well layer in a stand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc47a59e04600c15d74834e82f6a7e3
https://doi.org/10.1109/led.2015.2476380
https://doi.org/10.1109/led.2015.2476380
Publikováno v:
IEEE Electron Device Letters. 36:478-480
Improved performance in CMOS interdigitated back-contact photovoltaic devices (IBC-PVs) is demonstrated by utilizing interdigitated junctions and a back metal reflector to simultaneously achieve large total junction area, uniform series resistance, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a2a2fbb7ec60a6d86b442ed51f3864
https://doi.org/10.1109/led.2015.2411152
https://doi.org/10.1109/led.2015.2411152
Publikováno v:
2015 International Symposium on Next-Generation Electronics (ISNE).
Enhanced photocurrent generation in CMOS back-contact photovoltaic devices is experimentally demonstrated in this work by utilizing multilevel metals in standard bulk CMOS to simultaneously achieve uniform series resistance of devices and high optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::610a964553a61a106bc0f4407f6102d5
https://doi.org/10.1109/isne.2015.7131993
https://doi.org/10.1109/isne.2015.7131993