Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Jia Xing Lin"'
Publikováno v:
GCCE
A content delivery network (CDN) is composed of several edge servers which are distributed in different regions and provide web objects locally. If a web client sends one request to an edge server that has no available cache, i.e., cache miss, this e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b949260d455cc6b771625e9a4c4e8af4
https://doi.org/10.1109/gcce.2017.8229347
https://doi.org/10.1109/gcce.2017.8229347
Publikováno v:
Japanese Journal of Applied Physics. 45:3154-3158
In this work, low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with sequential lateral solidification (SLS) laser annealing process were fabricated. The grain boundaries (GB) can be well-controlled to avoid the channel area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0621e987335bb2866e9b2ff392e76ce
https://doi.org/10.1143/jjap.45.3154
https://doi.org/10.1143/jjap.45.3154
Autor:
Jia Xing Lin, 林嘉興
99
For the recovery of the Xinguan community, the different resources, including government, residents and the community association, combine together to make the suitable development and satisfied results, so that the experiences are viewed as
For the recovery of the Xinguan community, the different resources, including government, residents and the community association, combine together to make the suitable development and satisfied results, so that the experiences are viewed as
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/00157074560967034221
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1650c7e27153deb6321442ba7751fb3a
https://doi.org/10.7567/ssdm.2005.b-9-2
https://doi.org/10.7567/ssdm.2005.b-9-2
Autor:
Chi-Lin Chen, Yu-Cheng Chen, James S. Im, A. M. Chitu, A. B. Limanov, Chi-Ming Chang, Hisng-Hua Wu, P. C. van der Wilt, Jia-Xing Lin, Hung-Tse Chen
Publikováno v:
2005 IEEE LEOS Annual Meeting Conference Proceedings.
Single-pulse excimer-laser-induced enhancement of lateral crystallization by applying a heat-retaining capping layer on amorphous silicon is well confirmed. Through analysis of polycrystalline silicon microstructure and of transient reflectance signa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6377e2a65e30d77ca8d75c8610be70e3
https://doi.org/10.1109/leos.2005.1548312
https://doi.org/10.1109/leos.2005.1548312
Publikováno v:
Electrochemical and Solid-State Letters. 9:H81
Roughness effect on uniformity and reliability of sequential lateral solidified low-temperature polycrystalline silicon thin-film transistors were studied by comparison of transistors made on a thin-film substrate with and without planarization proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4542605ccffe853480d4673c4e9410d1
https://doi.org/10.1149/1.2209430
https://doi.org/10.1149/1.2209430
Autor:
Hsing Hua Wu, Po-Tsun Liu, Chi Lin Chen, Hung Tse Chen, Jia Xing Lin, Huang Sung Yu, Shun Fa Huang, Ting-Chang Chang, Yu G. Chen
Publikováno v:
SID Symposium Digest of Technical Papers. 37:246
For the purpose of a reliable driving back-plane in AMOLED application, the Heat Retaining Enhanced Crystallization (HREC) technology is developed. A heat-retaining capping layer is applied in order to effectually slow down the heat dissipation and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::202cf3c931680f5727e9b6502526cf43
https://doi.org/10.1889/1.2433467
https://doi.org/10.1889/1.2433467
Autor:
Chi Lin Chen, C. W. Chen, Yu-Cheng Chen, Ting-Chang Chang, Jia Xing Lin, Po Hao Tsai, Hau-Yan Lu, Po-Tsun Liu, Hung Tse Chen, H. H. Wu, Jason C. Chang
Publikováno v:
SID Symposium Digest of Technical Papers. 36:1152
In this paper, flash memories using low temperature poly-Si thin- film transistors (LTPS-TFTs) with oxide-nitride-oxide (ONO) stack structure on glass was studied and fabricated. The surface roughness Rms of poly-Si implemented in this work is less t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29748f9897cb06ca2ca761c2a98bb1e8
https://doi.org/10.1889/1.2036205
https://doi.org/10.1889/1.2036205
Autor:
Jia-Xing Lin, Yung-Fu Wu, Yu‐Rung Liu, Shang‐Wen Chang, Yu-Cheng Chen, Chai-Yuan Sheu, Jung‐Fang Chang, Yung-Hui Yeh, Chi-Lin Chen
Publikováno v:
SID Symposium Digest of Technical Papers. 34:216
The process of smoothing polycrystalline silicon surface has been investigated. By etching the precursor and controlling the laser annealing, The roughness of poly-Si can be planarized to a very low level RMS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7be9b55c98db1667e747722898e4f772
https://doi.org/10.1889/1.1832241
https://doi.org/10.1889/1.1832241