Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Jia Woei Wu"'
Autor:
James J.-Q. Lu, Collin Hitchcock, Nga C. Lee, Jia-Woei Wu, Bill Alexander, Khai D. T. Ngo, Sauvik Chowdhury, Woochan Kim, T. Paul Chow
Publikováno v:
International Symposium on Microelectronics. 2014:000031-000036
Double-sided module exhibits electrical and thermal characteristics that are superior to wire-bonded counterpart. Such structure, however, induces more than twice the thermo-mechanical stress in a single-layer structure. Compressive posts have been d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbd3556043c75cd8f388e3d646730a7b
https://doi.org/10.4071/isom-ta21
https://doi.org/10.4071/isom-ta21
Autor:
James J.-Q. Lu, Jia-Woei Wu, Mona M. Hella, Erik English, Rajendra Dahal, Kuan-Chih Huang, Yaron Danon, Adam Weltz, Ishwara B. Bhat
Publikováno v:
SPIE Proceedings.
The development of high-efficiency solid state thermal neutron detectors at low cost is critical for a wide range of civilian and defense applications. The use of present neutron detector system for personal radiation detection is limited by the cost
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33dacbcefd034afe7ca59bf60a46cb89
https://doi.org/10.1117/12.2224050
https://doi.org/10.1117/12.2224050
Autor:
Collin Hitchcock, Jia Woei Wu, Khai D. T. Ngo, James J.-Q. Lu, T. Paul Chow, Sauvik Chowdhury, Woochan Kim
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A 1200V, 25A bi-directional silicon DMOS-IGBT has been successfully fabricated using a hydrophobic bonding process at low temperature (400°C). With the aid of a glass carrier approach, a flat and clean bonding surface for producing an electrically s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77bbfeb83febdebe93d560336b20e8e1
https://doi.org/10.1109/ispsd.2014.6855984
https://doi.org/10.1109/ispsd.2014.6855984
Publikováno v:
Advances in Multifunctional Materials and Systems II
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76d748ede96e4021efe70cac88c6c8e2
https://doi.org/10.1002/9781118771402.ch12
https://doi.org/10.1002/9781118771402.ch12
Autor:
Jia Woei Wu, Ishwara B. Bhat, K. Ahmed, Adam Weltz, James J.-Q. Lu, Yaron Danon, Rajendra Dahal
Publikováno v:
Applied Physics Express. 9:065801
The in-plane and out-of-plane mobility–lifetime products of electrons and holes in free-standing hexagonal boron nitride (hBN) films are extracted from current–voltage characteristics of metal–hBN–metal structures measured under external exci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37b0cabc38f007fce18591a2b824225b
https://doi.org/10.7567/apex.9.065801
https://doi.org/10.7567/apex.9.065801
Autor:
Jia-Woei Wu, Weltz, Adam, Koirala, Machhindra, Lu, James J.-Q., Dahal, Rajendra, Danon, Yaron, Bhat, Ishwara B.
Publikováno v:
Applied Physics Letters; 5/8/2017, Vol. 110 Issue 19, p1-5, 6p
Autor:
Jia-Woei Wu, Dai-Ying Lee, Sheng-Yu Wang, Tai-Yuen Huang, Guo-Yong Zhang, Tseung-Yuen Tseng, Chung-Jung Hung, I-Chuan Yao
Publikováno v:
Japanese Journal of Applied Physics. 52:041101
Unipolar resistive switching behaviors including bistable memory switching and monostable threshold switching were found in ZrO2 thin films fabricated by a simple sol–gel method with the Ti/ZrO2/Pt structure. The multilevel resistive switching beha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1f3053c3c371c3caaabc0a422282422
https://doi.org/10.7567/jjap.52.041101
https://doi.org/10.7567/jjap.52.041101
Publikováno v:
ECS Meeting Abstracts. :36-36
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e95b738fe06abef396a5b4db19c52341
https://doi.org/10.1149/ma2011-02/2/36
https://doi.org/10.1149/ma2011-02/2/36
Publikováno v:
Nanotechnology. 21:495201
In this study, the resistive switching characteristics of a ZrO(2)-based memory film with an embedded Mo layer are investigated. The experimental results show that the forming process can be removed by inserting an embedded Mo metal layer within ZrO(
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0942f9cfd7506feec164a114c5dbbe08
https://doi.org/10.1088/0957-4484/21/49/495201
https://doi.org/10.1088/0957-4484/21/49/495201