Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Jia Quan Su"'
Autor:
Jia Quan Su, Yue Kuo
Publikováno v:
ECS Journal of Solid State Science & Technology; Nov2024, Vol. 13 Issue 11, p1-7, 7p
Publikováno v:
Catalysts, Vol 11, Iss 3, p 383 (2021)
Ozone is a kind of hazardous gas in indoor areas and needs to be removed in order to protect the human respiratory system. Previous methods include physical adsorption, thermal treatment, electromagnetic radiation removal, catalysis and photocatalysi
Externí odkaz:
https://doaj.org/article/51f745fef5c74064841a7690a896b3cd
Publikováno v:
MRS Advances. 7:301-304
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03667ccbbe0b5a81a3cb023d547e183d
https://doi.org/10.1557/s43580-022-00276-5
https://doi.org/10.1557/s43580-022-00276-5
Autor:
Yue Kuo, Jia Quan Su
Publikováno v:
ECS Transactions. 104:47-53
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c0c2c11ecd604acb35a9355d8e148b9
https://doi.org/10.1149/10403.0047ecst
https://doi.org/10.1149/10403.0047ecst
Autor:
Yue Kuo, Jia Quan Su
Publikováno v:
ECS Transactions. 102:167-175
Cu is a widely used interconnect material in high density ICs, large area TFT LCDs, etc. Due to the difficulty in etching the Cu thin film using the conventional plasma etching method [1], the CMP method was developed to achieve this goal [2]. Kuo’
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::433971a8dd9379b4cc333052b0625eb1
https://doi.org/10.1149/10202.0167ecst
https://doi.org/10.1149/10202.0167ecst
Autor:
Jia Quan Su, Yue Kuo
Publikováno v:
MRS Advances. 5:2827-2836
The reliability of the plasma etched copper lines with the self-aligned copper oxide passivation layer has been studied with the electromigration stress method. The oxide passivation layer was prepared by plasma oxidation, which covers the entire exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b7e18c9fa858c12562841d95ae31e32
https://doi.org/10.1557/adv.2020.310
https://doi.org/10.1557/adv.2020.310
Autor:
Jia Quan Su, Yue Kuo
Publikováno v:
ECS Transactions. 98:99-105
Copper (Cu) is a widely used interconnection material in high density ICs, large area TFT LCDs etc. CMP is a production method used in etching Cu fine lines in ICs [1,2]. Although plasma etching is widely used in preparing small geometry aluminum and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03d40c5dfc7ecbaa3995a65ead66d543
https://doi.org/10.1149/09803.0099ecst
https://doi.org/10.1149/09803.0099ecst
Autor:
Jia Quan Su, Yue Kuo
Publikováno v:
ECS Transactions. 97:51-60
Copper (Cu) is a widely used interconnection material in integrated circuits (ICs) and large area thin film transistor (TFT) arrays. Chemical mechanical polishing (CMP) is the most popular production method in etching Cu fine lines [1,2]. Cu cannot b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83b734ff7a70de47863b739182a580ec
https://doi.org/10.1149/09703.0051ecst
https://doi.org/10.1149/09703.0051ecst
Autor:
Jia Quan Su, Yue Kuo
Publikováno v:
ECS Meeting Abstracts. :858-858
Copper (Cu) is a widely used interconnect material in high density ICs and large area TFT LCDs. A barrier layer is required for the Cu line to prevent it from diffusion to the bottom dielectric and to improve the adhesion. When TaW or TaN is used as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f4aa6d3e3148a584728cfccb5d70c60
https://doi.org/10.1149/ma2022-0217858mtgabs
https://doi.org/10.1149/ma2022-0217858mtgabs
Publikováno v:
ECS Meeting Abstracts. :883-883
Copper (Cu) is a popular interconnect material in ICs and other microelectronics. As the technology node is reduced, the performance of copper interconnect lines becomes challenging due to the CMP limitation and the reliability concern [1,2]. It has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef19d4c2cba9268b1d244bdeb572674e
https://doi.org/10.1149/ma2022-0218883mtgabs
https://doi.org/10.1149/ma2022-0218883mtgabs