Výsledky vyhledávání - "Jia Min Shieh"

Akademický článek

Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate

Autor: Yu‐Chieh Hsu, Yan‐Yu Chen, Jia‐Min Shieh, Wen‐Hsien Huang, Chang‐Hong Shen, Yu‐Lun Chueh

Publikováno v: Advanced Electronic Materials, Vol 9, Iss 12, Pp n/a-n/a (2023)

Abstract A pulsed laser annealing method is utilized to directly synthesize nickel silicide (NiSi) as a contact material to improve the contact of electric devices. Three laser wavelengths, 355 nm (ultraviolet laser), 532 nm (green laser), and 1064 n

Externí odkaz: https://doaj.org/article/f64d202f63564b9997473fb527c58ce5

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Akademický článek

P-type conductive Ga2O3 epilayers grown on sapphire substrate by phosphorus-ion implantation technology

Autor: Ray Hua Horng, Xin-Ying Tsai, Fu-Gow Tarntair, Jia-Min Shieh, Shao-Hui Hsu, Jitendra Pratap Singh, Guan-Cheng Su, Po-Liang Liu

Publikováno v: Materials Today Advances, Vol 20, Iss , Pp 100436- (2023)

This study utilized various phosphorus-ion implantation techniques, incorporating low, medium, and high doses, to investigate the electrical properties of unintentionally doped β-Ga2O3 epilayers. These epilayers were grown on sapphire substrates by

Externí odkaz: https://doaj.org/article/87f286481e074710b610a7ddf7c7e6a2

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Akademický článek

Formation of quaternary Zn(AlxGa1−x)2O4 epilayers driven by thermally induced interdiffusion between spinel ZnGa2O4 epilayer and Al2O3 substrate

Autor: Samiran Bairagi, Jui-Che Chang, Fu-Gow Tarntair, Wan-Yu Wu, Gueorgui K. Gueorguiev, Edward Ferraz de Almeida, Jr., Roger Magnusson, Kun-Lin Lin, Shao-Hui Hsu, Jia-Min Shieh, Jens Birch, Ray-Hua Horng, Kenneth Järrendahl, Ching-Lien Hsiao

Publikováno v: Materials Today Advances, Vol 20, Iss , Pp 100422- (2023)

Zinc aluminogallate, Zn(AlxGa1−x)2O4 (ZAGO), a single-phase spinel structure, offers considerable potential for high-performance electronic devices due to its expansive compositional miscibility range between aluminum (Al) and gallium (Ga). Direct

Externí odkaz: https://doaj.org/article/5c7e31a3c7d1413ab12e36af82c6e64a

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Akademický článek

CiM3D: Comparator-in-Memory Designs Using Monolithic 3-D Technology for Accelerating Data-Intensive Applications

Autor: Akshay Krishna Ramanathan, Srivatsa Srinivasa Rangachar, Hariram Thirucherai Govindarajan, Je-Min Hung, Chun-Ying Lee, Cheng-Xin Xue, Sheng-Po Huang, Fu-Kuo Hsueh, Chang-Hong Shen, Jia-Min Shieh, Wen-Kuan Yeh, Mon-Shu Ho, Jack Sampson, Meng-Fan Chang, Vijaykrishnan Narayanan

Publikováno v: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 1, Pp 79-87 (2021)

The compare operation is widely used in many applications, from fundamental sorting to primitive operations in the database and AI systems. We present SRAM-based 3-D-CAM circuit designs using a monolithic 3-D (M3D) integration process for realizing b

Externí odkaz: https://doaj.org/article/07f164221d6348c2a5e1b6f7338a62ae

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Akademický článek

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs

Autor: Catherine Langpoklakpam, An-Chen Liu, Neng-Jie You, Ming-Hsuan Kao, Wen-Hsien Huang, Chang-Hong Shen, Jerry Tzou, Hao-Chung Kuo, Jia-Min Shieh

Publikováno v: Micromachines, Vol 14, Iss 3, p 576 (2023)

In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN. The fabricated device exhibits a lower contact

Externí odkaz: https://doaj.org/article/93338f7dd6d141c7b2dd805a523717ef

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Stable and Efficient Hole Selective Contacts for Silicon Photovoltaics via Solution-Processed Luminescent Small Molecules

Autor: Li-Jung Kuo, Li-Yu Li, Yu-Chun Chang, Tong-Ke Lin, Han-Chen Chang, Yu-Chiao Shieh, Shih-Wei Chen, Jia-Min Shieh, Li-Yin Chen, Peichen Yu, Yu-Chiang Chao, Hsin-Fei Meng

Publikováno v: Journal of Electronic Materials. 52:2708-2717

We report an organic luminescent small molecule, Bis(1-phenylisoquinoline) (acetylacetonate) iridium(III) or Ir(piq)2(acac), that can function as a stable and efficient hole selective contact (HSC) for crystalline silicon (c-Si) solar cells. The devi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::83c8336eaf75f3d2415e9e04b91548a4
https://doi.org/10.1007/s11664-023-10233-z

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Dual-mode frequency multiplier in graphene-base hot electron transistor

Autor: Bor-Wei Liang, Min-Fang Li, Hung-Yu Lin, Kai-Shin Li, Jyun-Hong Chen, Jia-Min Shieh, Chien-Ting Wu, Kristan Bryan Simbulan, Ching-Yuan Su, Chieh-Hsiung Kuan, Yann-Wen Lan

Publikováno v: Nanoscale. 15:2586-2594

A graphene-base hot electron transistor integrated with a 2D material heterojunction is demonstrated as a frequency modulator. Our device can operate as a doubler or tripler with AC signals from 100 kHz to 10 MHz in single tunneling transistor.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7cde2a44b6dfc6a91a7b41ae0d775212
https://doi.org/10.1039/d2nr06285b

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