Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jia Min Ang"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)
Abstract We investigate the functionality of NbOx-based selector devices on a flexible substrate. It was observed that the failure mechanism of cyclic tensile strain is from the disruption of atom arrangements, which essentially led to the crack form
Externí odkaz:
https://doaj.org/article/81928df7282c431bb7de7ca0fe781e4c
Autor:
Jia Min Ang, Putu Andhita Dananjaya, Samuel Chen Wai Chow, Gerard Joseph Lim, Chim Seng Seet, Wen Siang Lew
Publikováno v:
Nanotechnology. 34:185202
This work demonstrates oscillation frequency modulation in a NbO2-based relaxation oscillator device, in which the oscillation frequency increases with operating temperature and source voltage, and decreases with load resistance. An annealing-induced
Autor:
Samuel Chen Wai Chow, Putu Andhita Dananjaya, Jia Min Ang, Desmond Jia Jun Loy, Jia Rui Thong, Siew Wei Hoo, Eng Huat Toh, Wen Siang Lew
Publikováno v:
Applied Surface Science. 608:155233
Autor:
Eng Huat Toh, Desmond Jia Jun Loy, Samuel Chen Wai Chow, Kunqi Hou, Wen Siang Lew, Somsubhra Chakrabarti, Mun Yin Chee, Kuan Hong Tan, Yong Chiang Ee, Gerard Joseph Lim, Jia Min Ang, Putu Andhita Dananjaya, Jia Rui Thong
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
A multi-level state HfO 2 -based resistive switching model is reported, where the increase in stopping voltage (V stop ) and thus activation energy (E AC ) is attributed to the depletion of oxygen vacancy (V o ) concentration (n c ) during reset. Hop
Autor:
Yong Chiang Ee, Kunqi Hou, Jia Rui Thong, Desmond Loy Jia Jun, Jia Min Ang, Somsubhra Chakrabarti, Mun Yin Chee, Putu Andhita Dananjaya, Wen Siang Lew
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
In this paper, study on the thermal annealing effect is done on nanoscale W/TaO x /Pt resistive random access memory (RRAM) structure. Electrical characterization shows that device performance is improved after undergoing thermal annealing, with the
Autor:
Samuel Chow Chen Wai, Wen Siang Lew, Somsubhra Chakrabarti, Jia Min Ang, Jia Rui Thong, Kunqi Hou, Mun Yin Chee, Desmond Loy Jia Jun, Putu Andhita Dananjaya, Yong Chiang Ee
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
In this paper, conductance switching behavior of Pt/HfOx/Ti redox-based memristive devices has been thoroughly investigated. The conduction mechanisms involved during the device operation can be associated with the trap-controlled SCL conduction mech
Autor:
Ang, Jia Min1,2 (AUTHOR), Dananjaya, Putu Andhita1 (AUTHOR), Ang, Calvin Ching Ian1 (AUTHOR), Lim, Gerard Joseph1 (AUTHOR), Lew, Wen Siang1 (AUTHOR) wensiang@ntu.edu.sg
Publikováno v:
Scientific Reports. 9/25/2023, Vol. 13 Issue 1, p1-10. 10p.
Autor:
Ang, Jia Min, Dananjaya, Putu Andhita, Chow, Samuel Chen Wai, Lim, Gerard Joseph, Seet, Chim Seng, Lew, Wen Siang
Publikováno v:
Nanotechnology; 4/30/2023, Vol. 34 Issue 18, p1-10, 10p