Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Jia Ching Lin"'
Autor:
Jia Ching Lin, 林家慶
88
Until now, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by photoluminescence (PL). Firstly, we introduce the source of developing GaN, metal
Until now, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by photoluminescence (PL). Firstly, we introduce the source of developing GaN, metal
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/77869715873221214560
Autor:
Wen-Cheng Ke, Chih-Yung Chiang, Yi-Jiun Peter Lin, Yu-Shun Liao, Wei-Hsin Cheng, Kuo-Jen Chang, Jia-Ching Lin
Publikováno v:
Applied Physics Letters. 122
This study presents a straightforward strategy that embeds a graphene interlayer between InGaN-based light-emitting diodes (InGaN LEDs) and patterned sapphire substrate (PSS substrate) for substantial improving device performances of wavelength stabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a65f683f146adfb982a4084702798b03
https://doi.org/10.1063/5.0135040
https://doi.org/10.1063/5.0135040
Autor:
Yu-Ting Hsu, Che-Chi Lee, Wen-How Lan, Kai-Feng Huang, Kuo-Jen Chang, Jia-Ching Lin, Shao-Yi Lee, Wen-Jen Lin, Mu-Chun Wang, Chien-Jung Huang
Publikováno v:
Crystals, Vol 8, Iss 12, p 454 (2018)
Erbium-doped magnesium zinc oxides were prepared through spray pyrolysis deposition at 450 °C with an aqueous solution containing magnesium nitrate, zinc acetate, erbium acetate, and indium nitrate precursors. Diodes with different erbium-doped magn
Externí odkaz:
https://doaj.org/article/d5e6270b2a714c6c8d67f11a283c479e
Publikováno v:
Micromachines, Vol 9, Iss 5, p 205 (2018)
In this work, a MAPbBr3 quantum dot (QD-MAPbBr3) layer was prepared by a simple and rapid method. Octylammonium bromide (OABr) gives the MAPbBr3 better exciton binding energy, good surface morphology, and stability. To form a nanocrystalline thin fil
Externí odkaz:
https://doaj.org/article/fa53a6e466324847912c8383084a5326
Autor:
Kazuo Tsutsui, Chao-Hsin Chien, Hiroshi Iwai, Chia Chieh Hsu, Heng-Tung Hsu, Kuniyuki Kakushima, Venkatesan Nagarajan, Chia Hsun Wu, Yueh Chin Lin, Jin Hwa Lee, Kuan Ning Huang, Edward Yi Chang, Jing Neng Yao, Jia Ching Lin
Publikováno v:
Journal of Electronic Materials. 49:1348-1353
An enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) with La2O3/SiO2 gate insulator is investigated for high power application. The La2O3/SiO2 composite oxide formed amorphous La-silica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e560a08971d24756765b8321e5f556c
https://doi.org/10.1007/s11664-019-07790-7
https://doi.org/10.1007/s11664-019-07790-7
Autor:
Zhong-Yi Liang, Cheng-Yi Yang, Wen-Cheng Ke, Solomun Teklahymanot Tesfay, Chih-Yung Chiang, Kuo-Jen Chang, Jia-Ching Lin
Publikováno v:
Applied Surface Science. 494:644-650
This study investigates that high-quality GaN thin films can be grown on a few-layer graphene (FLG)/sapphire substrate by embedding a hybrid AlN buffer layer (BL). The hybrid AlN BL is constructed by low-temperature AlN nucleation layer (LT-AlN NL) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34b81d1fe873875a9227a2eb8321a264
https://doi.org/10.1016/j.apsusc.2019.07.211
https://doi.org/10.1016/j.apsusc.2019.07.211
Autor:
Widi Son, Chih Yung Chiang, Wen-Cheng Ke, Tae Yeon Seong, Jia Ching Lin, Chieh Yi Chen, Solomun Teklahymanot Tesfay, Kuo-Jen Chang, Zhong Yi Liang
Publikováno v:
ACS applied materialsinterfaces. 11(51)
Carbon-doped GaN (GaN:C) Schottky diodes are prepared by controlling the destruction status of the graphene interlayer (GI) on the substrate. The GI without a sputtered AlN capping layer (CL) was destroyed because of ammonia precursor etching behavio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb9e1e602bfbf94dca02d35bcd80e2cc
https://pubmed.ncbi.nlm.nih.gov/31773955
https://pubmed.ncbi.nlm.nih.gov/31773955
Autor:
Kuo-Jen Chang, Chih-Yung Chiang, Jia-Ching Lin, Wen-Cheng Ke, Chia-Yu Liao, Yi-Chan Lin, Tae Gyu Kim
Publikováno v:
Applied Surface Science. 546:149052
This study grew nitrogen doped ultrananocrystalline diamond (N-UNCD) conductive layer on InGaN-based light emitting diodes (LEDs) using the concave nanopattern (CNP) enhanced nucleation. The low nucleation density of the N-UNCD on bare LEDs (Br-LED)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4035a1b4bd71e1bdc5490f5856e68306
https://doi.org/10.1016/j.apsusc.2021.149052
https://doi.org/10.1016/j.apsusc.2021.149052
Autor:
Mu-Chun Wang, Jia Ching Lin, Che Chi Lee, Wen-Jen Lin, Kai-Feng Huang, Shao Yi Lee, Wen-How Lan, Kuo-Jen Chang, Yu Ting Hsu, Chien-Jung Huang
Publikováno v:
Crystals
Volume 8
Issue 12
Crystals, Vol 8, Iss 12, p 454 (2018)
Volume 8
Issue 12
Crystals, Vol 8, Iss 12, p 454 (2018)
Erbium-doped magnesium zinc oxides were prepared through spray pyrolysis deposition at 450 °
C with an aqueous solution containing magnesium nitrate, zinc acetate, erbium acetate, and indium nitrate precursors. Diodes with different erbium-do
C with an aqueous solution containing magnesium nitrate, zinc acetate, erbium acetate, and indium nitrate precursors. Diodes with different erbium-do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7db3455e8f6cdecca9c2e917e7cec86e
Publikováno v:
2018 7th International Symposium on Next Generation Electronics (ISNE).
In this study, the MAPbBr3 quantum dots (QD-MAPbBr3) were prepared by the simple and rapid method. Octylammonium bromide (OABr) makes the MAPbBr3 with better exciton binding energy, good surface morphology and stability. To form nanocrystalline thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf46da36c76070b11e314f4e5a058f4a
https://doi.org/10.1109/isne.2018.8394666
https://doi.org/10.1109/isne.2018.8394666