Zobrazeno 1 - 10
of 315
pro vyhledávání: '"Jia‐Min Shieh"'
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 12, Pp n/a-n/a (2023)
Abstract A pulsed laser annealing method is utilized to directly synthesize nickel silicide (NiSi) as a contact material to improve the contact of electric devices. Three laser wavelengths, 355 nm (ultraviolet laser), 532 nm (green laser), and 1064 n
Externí odkaz:
https://doaj.org/article/f64d202f63564b9997473fb527c58ce5
Autor:
Ray Hua Horng, Xin-Ying Tsai, Fu-Gow Tarntair, Jia-Min Shieh, Shao-Hui Hsu, Jitendra Pratap Singh, Guan-Cheng Su, Po-Liang Liu
Publikováno v:
Materials Today Advances, Vol 20, Iss , Pp 100436- (2023)
This study utilized various phosphorus-ion implantation techniques, incorporating low, medium, and high doses, to investigate the electrical properties of unintentionally doped β-Ga2O3 epilayers. These epilayers were grown on sapphire substrates by
Externí odkaz:
https://doaj.org/article/87f286481e074710b610a7ddf7c7e6a2
Autor:
Samiran Bairagi, Jui-Che Chang, Fu-Gow Tarntair, Wan-Yu Wu, Gueorgui K. Gueorguiev, Edward Ferraz de Almeida, Jr., Roger Magnusson, Kun-Lin Lin, Shao-Hui Hsu, Jia-Min Shieh, Jens Birch, Ray-Hua Horng, Kenneth Järrendahl, Ching-Lien Hsiao
Publikováno v:
Materials Today Advances, Vol 20, Iss , Pp 100422- (2023)
Zinc aluminogallate, Zn(AlxGa1−x)2O4 (ZAGO), a single-phase spinel structure, offers considerable potential for high-performance electronic devices due to its expansive compositional miscibility range between aluminum (Al) and gallium (Ga). Direct
Externí odkaz:
https://doaj.org/article/5c7e31a3c7d1413ab12e36af82c6e64a
Autor:
Akshay Krishna Ramanathan, Srivatsa Srinivasa Rangachar, Hariram Thirucherai Govindarajan, Je-Min Hung, Chun-Ying Lee, Cheng-Xin Xue, Sheng-Po Huang, Fu-Kuo Hsueh, Chang-Hong Shen, Jia-Min Shieh, Wen-Kuan Yeh, Mon-Shu Ho, Jack Sampson, Meng-Fan Chang, Vijaykrishnan Narayanan
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 1, Pp 79-87 (2021)
The compare operation is widely used in many applications, from fundamental sorting to primitive operations in the database and AI systems. We present SRAM-based 3-D-CAM circuit designs using a monolithic 3-D (M3D) integration process for realizing b
Externí odkaz:
https://doaj.org/article/07f164221d6348c2a5e1b6f7338a62ae
Autor:
Catherine Langpoklakpam, An-Chen Liu, Neng-Jie You, Ming-Hsuan Kao, Wen-Hsien Huang, Chang-Hong Shen, Jerry Tzou, Hao-Chung Kuo, Jia-Min Shieh
Publikováno v:
Micromachines, Vol 14, Iss 3, p 576 (2023)
In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN. The fabricated device exhibits a lower contact
Externí odkaz:
https://doaj.org/article/93338f7dd6d141c7b2dd805a523717ef
Autor:
Tsung-Ta Wu, Wen-Hsien Huang, Chih-Chao Yang, Hung-Chun Chen, Tung-Ying Hsieh, Wei-Sheng Lin, Ming-Hsuan Kao, Chiu-Hao Chen, Jie-Yi Yao, Yi-Ling Jian, Chiung-Chih Hsu, Kun-Lin Lin, Chang-Hong Shen, Yu-Lun Chueh, Jia-Min Shieh
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-
Externí odkaz:
https://doaj.org/article/dfca7c0d50a149839d75f7508a8ac08d
Autor:
Albert S. Lin, Parag Parashar, Chih-Chieh Yang, Wei-Ming Huang, Yi-Wen Huang, Ding-Rung Jian, Ming-Hsuan Kao, Shi-Wei Chen, Chang-Hong Shen, Jia-Min Shieh, Tseung Yuen Tseng
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 5, Pp 1-9 (2017)
It is widely known that thinner Si substrate is the main path for lower $/Watt HIT solar cells due to improved charge collection, reduced bulk and total recombination, and fewer raw material consumption (Panasonic, IEEE Journal of Photovoltaics., vol
Externí odkaz:
https://doaj.org/article/4aea7dbd377a4fa386c23b8aa727812e
Autor:
Yao-Jen Lee, Guang-Li Luo, Fu-Ju Hou, Min-Cheng Chen, Chih-Chao Yang, Chang-Hong Shen, Wen-Fa Wu, Jia-Min Shieh, Wen-Kuan Yeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 286-293 (2016)
Two parts of work are included in this paper. In the first part, the novel Ge gate-all-around field effect transistors (GAA FETs) are introduced and discussed. Fabrication of Ge GAA FETs requires only simple top-down dry etching and blanket Ge epitax
Externí odkaz:
https://doaj.org/article/b40ad4702e004701beba3270cb4fa02d
Autor:
Tung-Ying Hsieh, Ping-Yi Hsieh, Chih-Chao Yang, Chang-Hong Shen, Jia-Min Shieh, Wen-Kuan Yeh, Meng-Chyi Wu
Publikováno v:
Micromachines, Vol 11, Iss 8, p 741 (2020)
We introduce a single-grain gate-all-around (GAA) Si nanowire (NW) FET using the location-controlled-grain technique and several innovative low-thermal budget processes, including green nanosecond laser crystallization, far-infrared laser annealing,
Externí odkaz:
https://doaj.org/article/22a985f4cf5044729dee059c539d9738
Autor:
Po-Han Chen, Chun-An Chen, Yu-Ting Lin, Ping-Yi Hsieh, Meng-Hsi Chuang, Xiaoze Liu, Tung-Ying Hsieh, Chang-Hong Shen, Jia-Min Shieh, Meng-Chyi Wu, Yung-Fu Chen, Chih-Chao Yang, Yi-Hsien Lee
Publikováno v:
ACS Applied Materials & Interfaces. 15:10812-10819
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30b184cd8828ea92646e28f89a8cc2af
https://doi.org/10.1021/acsami.2c19705
https://doi.org/10.1021/acsami.2c19705