Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Ji-Zhou Kong"'
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Abstract ZnO nano-clips with better monodispersion were prepared successfully using zinc acetate hydrate (Zn(OAc)2·nH2O) as Zn source and ethylene glycol (EG) as solvent by a simple solution-based route-polyol process. The effect of solution concent
Externí odkaz:
https://doaj.org/article/4c5359a87a7f4d4ab4972326a676379f
Autor:
Ji-Zhou Kong, Hai-Fa Zhai, Wei Zhang, Shan-Shan Wang, Xi-Rui Zhao, Min Li, Hui Li, Ai-Dong Li, Di Wu
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-10 (2017)
Abstract N-doped ZnO/g-C3N4 composites have been successfully prepared via a facile and cost-effective sol-gel method. The nanocomposites were systematically characterized by XRD, FE-SEM, HRTEM, FT-IR, XPS, and UV-vis DRS. The results indicated that
Externí odkaz:
https://doaj.org/article/56941be6c1e14aefbdada7075b487bea
Autor:
Wei Zhang, Ji-Zhou Kong, Zheng-Yi Cao, Ai-Dong Li, Lai-Guo Wang, Lin Zhu, Xin Li, Yan-Qiang Cao, Di Wu
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-11 (2017)
Abstract The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt a
Externí odkaz:
https://doaj.org/article/dd9dcf15d5fb4525a6e51197079d98c9
Autor:
Yi-Chao Wang, Zhi-Wei Liu, Peng Xu, Zhuo-Qi Hong, Ji-Zhou Kong, Qian-Zhi Wang, Hong-Yu Wei, Fei Zhou
Publikováno v:
Journal of Solid State Electrochemistry.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a72bb9c4cd3281001b731157f5c57084
https://doi.org/10.1007/s10008-023-05470-5
https://doi.org/10.1007/s10008-023-05470-5
Autor:
Ji-Zhou Kong, Qing-Wei Zhai, Jun-Jie Shen, Xin-Yu Sun, Yan-Qiang Cao, Yan Xuan, Ai-Dong Li, Qian-Zhi Wang, Fei Zhou
Publikováno v:
Surface and Coatings Technology. 429:127981
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99185e7a76fe7f01ab3979133d539c23
https://doi.org/10.1016/j.surfcoat.2021.127981
https://doi.org/10.1016/j.surfcoat.2021.127981
Publikováno v:
Journal of the American Ceramic Society. Sep2009, Vol. 92 Issue 9, p1959-1965. 7p. 2 Diagrams, 1 Chart, 8 Graphs.
Autor:
Wei, Zhang, Ji-Zhou, Kong, Zheng-Yi, Cao, Ai-Dong, Li, Lai-Guo, Wang, Lin, Zhu, Xin, Li, Yan-Qiang, Cao, Di, Wu
Publikováno v:
Nanoscale Research Letters
The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ca14a9329446e98952a46e49ab59780b
https://pubmed.ncbi.nlm.nih.gov/28599512
https://pubmed.ncbi.nlm.nih.gov/28599512
Publikováno v:
Materials Science Forum. :2029-2032
Due to the great potentials of tantalite and niobate materials in ferroelectric and photocatalytic applications, development of proper tantalum or niobium precursors is urgently need. In this work, a simple novel route to synthesize environmentally f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31ae041483b401db85d12db3899f36e3
https://doi.org/10.4028/www.scientific.net/msf.654-656.2029
https://doi.org/10.4028/www.scientific.net/msf.654-656.2029
Publikováno v:
Journal of Materials Chemistry; Mar2011, Vol. 21 Issue 13, p5046-5050, 5p