Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ji-Xuan Yang"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 557-563 (2021)
The dynamic on-resistance increase during power switching is one of the challenges of GaN-based HEMTs (high-electron-mobility transistors) for power electronic applications. Both the surface traps and buffer traps reduce channel carriers, resulting i
Externí odkaz:
https://doaj.org/article/df95df06842e4ff19b9d891c6900f81f
Publikováno v:
Mechanical Systems and Signal Processing. 193:110252
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6b4319859978acdbf04ab06d42e0cfb
https://doi.org/10.1016/j.ymssp.2023.110252
https://doi.org/10.1016/j.ymssp.2023.110252
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 557-563 (2021)
The dynamic on-resistance increase during power switching is one of the challenges of GaN-based HEMTs (high-electron-mobility transistors) for power electronic applications. Both the surface traps and buffer traps reduce channel carriers, resulting i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6060eab124cd9f45daf7e15b255a814
https://doi.org/10.1109/jeds.2021.3078522
https://doi.org/10.1109/jeds.2021.3078522