Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ji-Ting Liang"'
Publikováno v:
IEEE Transactions on Electron Devices. 59:1599-1606
Using unique ambipolar conduction, a Schottky barrier multibit cell can be programmed using source-side electron injection and can be erased reversely using drain-side hole compensation. This paper numerically discusses the particular reading operati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb0b5f31a4cb63e34791435c3f5c6016
https://doi.org/10.1109/ted.2012.2190514
https://doi.org/10.1109/ted.2012.2190514
Autor:
Riichiro Shirota, Su Lu, Ming-Kun Huang, Chun-Hsing Shih, Yan-Xiang Luo, Sau-Mou Wu, Wei Chang, Ji-Ting Liang, A Wang, Chiu-Tsung Huang, Nguyen Dang Chien, Chenhsin Lien, Wen-Fa Wu
Publikováno v:
IEEE Transactions on Electron Devices. 58:1257-1263
The edge encroachment of tunnel oxide is experimentally found to degrade the Fowler-Nordheim (FN) tunneling gate current of NAND-type Flash cells. This work elucidates the impact of edge encroachment on FN tunneling current for use in programming and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::532afbdc317724cea4104c8b8c0d0960
https://doi.org/10.1109/ted.2011.2105492
https://doi.org/10.1109/ted.2011.2105492
Autor:
Ji-Ting Liang, Chun-Hsing Shih
Publikováno v:
IEEE Transactions on Electron Devices. 57:1774-1780
This paper presents a novel Schottky barrier multibit cell with source-side injected programming and reverse drain-side hole erasing. Based on the unique ambipolar conduction of Schottky barrier devices, the source Schottky barrier promotes the amoun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7bb4d39569ad7e1d7affba2e60b08b3
https://doi.org/10.1109/ted.2010.2050547
https://doi.org/10.1109/ted.2010.2050547
Autor:
Yan-Xiang Luo, Jr-Jie Tsai, Ming-Kun Huang, Ruei-Kai Shia, Wen-Fa Wu, Wei Chang, Nguyen Dang Chien, Ji-Ting Liang, Chenhsin Lien, Chun-Hsing Shih
Publikováno v:
IEEE Electron Device Letters. 32:1477-1479
A new Schottky barrier (SB) nonvolatile nanowire memory is reported experimentally with efficient low-voltage programming and erasing. By applying an SB source/drain to enhance the electrical field in the silicon gate-all-around nanowire, the nonvola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a201b37305fdd602dfd882f4abb3a271
https://doi.org/10.1109/led.2011.2164510
https://doi.org/10.1109/led.2011.2164510
Publikováno v:
IEEE Electron Device Letters. 32:1331-1333
This letter explores source-side injection in Schottky barrier metal-oxide-semiconductor (MOS) devices. Unlike drain-side injection in conventional MOS devices, a source-side lucky electron model predicts the specific source-side injection in Schottk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f30b99f7fe0b4a89329b0f8beced932c
https://doi.org/10.1109/led.2011.2162577
https://doi.org/10.1109/led.2011.2162577
Autor:
Ji-Ting Liang, Chun-Hsing Shih
Publikováno v:
2007 International Semiconductor Device Research Symposium.
Conventional floating gate flash memory has been the mainstream VLSI memory for the past decade. However, as the gate length scaled into nanoscale regime, it is great challenge to continue the scaling pace due to the physical limit of the tunneling o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3568dae57b1ea3280e789e8076f5d693
https://doi.org/10.1109/isdrs.2007.4422301
https://doi.org/10.1109/isdrs.2007.4422301
Autor:
Chun-Hsing Shih1 cshih@ncnu.edu.tw, Ji-Ting Liang2,3
Publikováno v:
IEEE Transactions on Electron Devices. Aug2010, Vol. 57 Issue 8, p1774-1780. 7p.
Autor:
Chun-Hsing Shih, Ji-Ting Liang
Publikováno v:
2007 International Semiconductor Device Research Symposium; 2007, p1-2, 2p