Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Ji-Su Son"'
Autor:
Jung, Bokmi, Ji-Su Son
Publikováno v:
The Korean Journal of Community Living Science. 32:5-18
Autor:
Ji-Su Son, Jung, Bokmi
Publikováno v:
The Korean Journal of Community Living Science. 30:421-431
Autor:
Ji-Su Son, Sang-Mok Jung, Han-Joo Lee, Tae-Hee Park, Jae-Hyuk Jeon, Seul-Gi Kang, Kwang Soo Lee, Hyun-Woung Shin, Ji-Young Jeon
Publikováno v:
Korean Journal of Environment and Ecology. 31:88-92
Publikováno v:
Journal of Applied Phycology. 28:3459-3467
Temporal and spatial variations in the proximate composition, amino acid content, and mineral content of Pyropia yezoensis were evaluated at Jindo, Haenam, and Seochun on the southern and western coasts of Korea. The proximate composition of P. yezoe
Autor:
Han-Seong Lee, Hyun-Woung Shin, Han-Joo Lee, Sang-Mok Jung, Jae-Hyuk Jeon, Seul-Gi Kang, Ji-Su Son
Publikováno v:
Korean Journal of Environment and Ecology. 30:92-97
Publikováno v:
Korean Journal of Environment and Ecology. 30:98-103
Autor:
Jae-Hyuk Jeon, M Smith CeliaB, Ji-Su Son, Sang-Mok Jung, Hyun-Woung Shin, Han-Joo Lee, Seul-Gi Kang
Publikováno v:
Korean Journal of Environment and Ecology. 29:736-742
대형녹조류인 Ulva pertusa는 전 세계 연안에 서식하는 저서성 종으로 대발생 또는 인공구조물에 착생되어 경제적, 사회적인 측면에서 문제를 야기시키고 있다. 착생생물을 제어하기 위해 신
Autor:
Han-Seong Lee, Sang-Mok Jung, Ji-Su Son, Han-Joo Lee, Jae-Hyuk Jeon, Seul-Gi Kang, Hyun-Woung Shin, Hee-Baik Chae
Publikováno v:
Korean Journal of Environment and Ecology. 29:564-569
Publikováno v:
physica status solidi (b). 252:1024-1030
Electrical characteristics of a variety of Schottky contacts formed with ten metal species on the a-plane of p-type low-Mg-doped GaN grown on r-plane sapphire substrates were studied. We found that while current–voltage characteristics obtained und
Autor:
Yoshio Honda, Sung-Min Hwang, Hiroshi Amano, Yong Gon Seo, Kwang Hyeon Baik, Ji-Su Son, Masahito Yamaguchi
Publikováno v:
Thin Solid Films. 546:108-113
We report on the characteristics of a -plane GaN films directly grown on optimized silicon-dioxide-patterned r -plane sapphire substrates. Various shapes and sizes of silicon dioxide patterns were considered with the aim of achieving fully coalescent