Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Ji-Soo Chang"'
Autor:
Ji-Soo Chang, Eunsang Jang, Youngkil Choi, Moonkyu Song, Sanghyo Lee, Gi-Jin Kang, Junho Kim, Uijong Song, Chang-Yeon Cho, Giyeong Ko, Hyunseok Hwang, Junseo Lee, Han-Sol Lee, Yong-Il Kwon, Kyungduck Seo, Taeseon Kim, Hyun-Wook Lim, Seongwook Song, Jae-Youl Lee, Sung Ung Kwak
Publikováno v:
IEEE Journal of Solid-State Circuits. 58:155-166
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::869f36e8640899d3d6b66cabfd21a7d6
https://doi.org/10.1109/jssc.2022.3220081
https://doi.org/10.1109/jssc.2022.3220081
Autor:
Ji-Soo Chang, Eunsang Jang, Youngkil Choi, Moonkyu Song, Sanghyo Lee, Gi-Jin Kang, Junho Kim, Shin-Wuk Kang, Uijong Song, Chang-Yeon Cho, Junseo Lee, Kyungduck Seo, Seongwook Song, Sung Ung Kwak
Publikováno v:
2022 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78d20d32e86c3ad6c740fd7d35e74367
https://doi.org/10.1109/isscc42614.2022.9731106
https://doi.org/10.1109/isscc42614.2022.9731106
Autor:
Seungchan Heo, Ji-Soo Chang, Sanghoon Kang, Hyung-sun Lim, Sang-Wook Han, Jongwoo Lee, Il-Yong Jong, Ki Yong Son, Chih-Wei Yao, Joon-hee Lee, Ronghua Ni, Daechul Jeong, Thomas Byunghak Cho, Jaehyuk Jang, Yongrong Zuo, Jeong-Yeol Bae, Sang-Hyun Baek, Lee Jae-Hoon, Byoungjoong Kang, Seunghyun Oh, Inyup Kang
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:3541-3552
The world’s first single-chip RF transceiver to support 5G sub-6-GHz new radio (NR) and long-term evolution (LTE) E-UTRA New Radio-Dual Connectivity (EN-DC) in 14-nm FinFET CMOS technology is presented. The single-chip transceiver integrates identi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9087d36b11243c119d8c46d575670441
https://doi.org/10.1109/jssc.2019.2938132
https://doi.org/10.1109/jssc.2019.2938132
Autor:
Seongwon Joo, Jounghyun Yim, Shinwoong Kim, Inhyo Ryu, Choi Inyoung, Jong-Dae Bae, Chia-Hsin Wu, Huijung Kim, Ji-Soo Chang, Myoung-Gyun Kim, Sang-Yun Lee, Ji-Young Lee, Sang-Wook Han, Thomas Byunghak Cho, Chris Hunter, Won Ko, Byeongwan Ha, Taewan Kim, Daeyoung Yoon, Michael J. Cowell, Alexander Thoukydides, Jacob Christopher Sharpe, Liu Qing
Publikováno v:
2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper presents a 28nm CMOS wireless connectivity combo IC with a 2×2 reconfigurable WiFi transceiver, and a BT 5.0 slim SOC. The WiFi transceiver can deliver 2G/5G Psat of 26.5/25.5dBm and 2G/5G NF of 3.6/3.8dB respectively, supporting contiguo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a85c854f1f07537bf9234c98122f646b
https://doi.org/10.1109/rfic.2018.8428992
https://doi.org/10.1109/rfic.2018.8428992
Autor:
Ji Soo Chang, Jae Chul Park, Daewoong Kwon, Wandong Kim, Byung-Gook Park, Sangwan Kim, Chang Jung Kim, Jang Hyun Kim
Publikováno v:
IEEE Transactions on Electron Devices. 58:1127-1133
For the first time, a comprehensive study is done regarding the stability under simultaneous application of light and gate dc bias in amorphous hafnium-indium-zinc-oxide (α-HIZO) thin-film transistors (TFTs). Subthreshold swing (SS) degradation, a n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2b2363cf83b39c843a32c2d366aa78e
https://doi.org/10.1109/ted.2011.2109388
https://doi.org/10.1109/ted.2011.2109388
Autor:
Ji-Soo Chang, Sangyoub Lee, Jinhyuck Yu, Hyunwon Moon, Wooseung Choo, Seungchan Heo, Seung-Il Choi, Byeong-Ha Park, Hwa-Yeal Yu
Publikováno v:
CICC
A fully integrated low-IF GPS receiver with minimum external components is implemented in a 65nm CMOS process. It has an integrated LNA and an active complex bandpass filter with a switchable signal bandwidth of 2MHz or 6 MHz to achieve the SNR impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de33377baed5b07134bdace61a18146f
https://doi.org/10.1109/cicc.2010.5617450
https://doi.org/10.1109/cicc.2010.5617450
Autor:
Hwa-Yeal Yu, Byeong-Ha Park, Seungchan Heo, Ji-Soo Chang, Jinhyunck Yu, Hyunwon Moon, Seung-Il Choi, Sangyoub Lee
Publikováno v:
ISSCC
Many mobile devices with personal navigation and location based services (LBS) are rapidly increasing in importance in our life. In particular, smart-phones with embedded GPS receivers are still growing their share and soon they will be the main prod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c101b02ee52c8cbd5f793384ccd619e
https://doi.org/10.1109/isscc.2010.5434047
https://doi.org/10.1109/isscc.2010.5434047
Investigation on the characteristics of stress-induced hump in amorphous oxide thin film transistors
Autor:
Jang Hyun Kim, Sangwan Kim, Ji Soo Chang, Jae Chul Park, Daewoong Kwon, Chang Jung Kim, Byung-Gook Park
Publikováno v:
Applied Physics Letters. 99:043502
In this study, we investigate the instability of amorphous oxide thin film transistors using hafnium-indium-zinc oxide under simultaneous application of light and gate dc-bias. The hump characteristics are observed after negative gate bias and light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9e05251008d6c2b5e706c95bd23ec9b
https://doi.org/10.1063/1.3606538
https://doi.org/10.1063/1.3606538
Autor:
Jae Chul Park, I-hun Song, Sangwan Kim, Jang Hyun Kim, Ji Soo Chang, Daewoong Kwon, Byung-Gook Park, Wandong Kim, Chang Jung Kim, U In Jung
Publikováno v:
Applied Physics Letters. 98:063502
Negative bias-induced instability of amorphous hafnium indium zinc oxide (α-HIZO) thin film transistors (TFTs) was investigated at various temperatures. In order to examine temperature-induced effects, fabricated TFTs with different combinations of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cd89a1632a474bec2ba58fa3f3fe850
https://doi.org/10.1063/1.3549180
https://doi.org/10.1063/1.3549180
Autor:
U In Jung, Hyun Woo Kim, Chang Jung Kim, Ji Soo Chang, Jae Chul Park, Min-Chul Sun, Sangwan Kim, Jang Hyun Kim, Byung-Gook Park, Daewoong Kwon, I-hun Song, Garam Kim
Publikováno v:
Applied Physics Letters. 97:193504
A comprehensive study is done regarding stabilities under simultaneous stress of light and dc-bias in amorphous hafnium-indium-zinc-oxide thin film transistors. The positive threshold voltage (Vth) shift is observed after negative gate bias and light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fa52a1492e01eccfb95308f586848ab
https://doi.org/10.1063/1.3508955
https://doi.org/10.1063/1.3508955