Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Ji-Sheng Pan"'
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al2O3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy ba
Externí odkaz:
https://doaj.org/article/7e22b3768fb0485382b500235b73f599
Publikováno v:
Waves in Random and Complex Media. :1-30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd4db0ba13b6726a8ff257b203322261
https://doi.org/10.1080/17455030.2021.1989082
https://doi.org/10.1080/17455030.2021.1989082
Autor:
Xu Lian, Wenrui Dai, Ji-Sheng Pan, Wei Chen, Yong Zhao, Li Wang, Jinlin Yang, Zhongkai Hao, Yin Zhou, Xinhang Cui, Shuning Xiao
Publikováno v:
Energy Storage Materials. 26:391-399
Metal-organic frameworks (MOFs) have been widely employed as the precursors to obtain functional carbon with tuneable composition and structure. However, the design of 2D carbon nanostructures directly from two-dimensional (2D) nonlayered MOFs is sti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aa0115f1f8825542bdc5e9e17041e98
https://doi.org/10.1016/j.ensm.2019.11.010
https://doi.org/10.1016/j.ensm.2019.11.010
Publikováno v:
IEEE Journal of Quantum Electronics. 56:1-4
We report the growth of direct bandgap single-crystalline Ge1−xSnx thin films on unheated substrates by a modified magnetron sputtering system. The Ge1−xSnx thin films were deposited on Si, Ge, and GaAs substrates at room temperature. They were c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a86ddf69c7b849e0d33226fb0f05d21b
https://doi.org/10.1109/jqe.2019.2956347
https://doi.org/10.1109/jqe.2019.2956347
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021)
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021)
We analyzed the dry etching of perovskite oxides using argon-based inductively coupled plasmas (ICP) for photonics applications. Various chamber conditions and their effects on etching rates have been demonstrated based on Z-cut lithium niobate (LN).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4307eddf19253651262a8a3a447498b0
https://doi.org/10.21203/rs.3.rs-117471/v2
https://doi.org/10.21203/rs.3.rs-117471/v2
Publikováno v:
Materials Chemistry and Physics. 249:123017
Transition metal dichalcogenides (TMDCs) of group -VIB (MX2, M = Mo, W; X = S, Se, Te, etc.) with sizeable bandgap exhibit different interesting physical and chemical properties which open up new avenues to their technological applications. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cb48a3083b21aa3795afb22d60d6c31
https://doi.org/10.1016/j.matchemphys.2020.123017
https://doi.org/10.1016/j.matchemphys.2020.123017
Publikováno v:
2019 13th Symposium on Piezoelectrcity, Acoustic Waves and Device Applications (SPAWDA).
Introducing a density function to characterize the inhomogeneous unbounded space. Based on the principle of homogenization, use the complex variable function method to investigate harmonic dynamics stress of the radially inhomogeneous medium with a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab9441f7f078769f84bc798d8a85a940
https://doi.org/10.1109/spawda.2019.8681882
https://doi.org/10.1109/spawda.2019.8681882
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al2O3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbd1295e314cd2d1cefbd95c2fecb837
https://doi.org/10.1186/s11671-017-2271-x
https://doi.org/10.1186/s11671-017-2271-x
Publikováno v:
Advanced Materials Research. 1027:240-245
For subsurface crack detection of single crystal SiC wafer, this paper proposed a cross-sectional cleavage detection method and compared with traditional cross-sectional sample preparation method. The characteristics and detection results of two cros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8780e84d037b54d6b0b89c5fb5a9964f
https://doi.org/10.4028/www.scientific.net/amr.1027.240
https://doi.org/10.4028/www.scientific.net/amr.1027.240
Publikováno v:
Advanced Materials Research. 797:284-290
The growth of epitaxial layer of SiC wafer requires the surface of SiC substrate to reach an atomic scale accuracy. To solve the problems of low machining efficiency and low surface accuracy in the polishing process of SiC wafer, a novel ultra-precis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4235265d6165cf7882cf97bf98ce8a9
https://doi.org/10.4028/www.scientific.net/amr.797.284
https://doi.org/10.4028/www.scientific.net/amr.797.284